Array Substrate Light Transmittance via Insulating Layer Extraction
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Solution Overview
Problem
The existing manufacturing processes for liquid-crystal display (LCD) arrays face challenges due to the partial light reflection at the interface between silicon oxide and silicon nitride layers, which reduces the aperture ratio of pixels, necessitating a novel array substrate structure to enhance light transmittance.
Innovation Solution
The proposed solution involves a display device with a substrate featuring a metal oxide semiconductor transistor, a gate insulating layer, and a second insulating layer with specific openings to reduce the interface between silicon oxide and silicon nitride layers, improving light transmittance by optimizing the structure of the array substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicon oxide layer and silicon nitride layer are used as insulating layers between different conductive layers, then the insulating properties are improved, but light transmittance deteriorates due to partial light reflection at the interface
Solution Approach 1:
The patent removes the silicon nitride layer from the insulating layer structure in the pixel region, extracting the harmful reflective interface while maintaining the silicon oxide layer. This extraction eliminates the primary source of light reflection and improves light transmittance while preserving sufficient insulating properties through the remaining silicon oxide layer and alternative insulating structures.
Solution Approach 2:
The patent applies different insulating layer configurations in different regions: in the pixel region where light transmittance is critical, only the silicon oxide layer is used without the silicon nitride layer, while in the non-pixel region where insulating properties are more important, both silicon oxide and silicon nitride layers are used. This local differentiation optimizes both light transmittance and insulating properties in their respective regions.
2Reliability
If multiple insulating layers with different refractive indexes are stacked, then the insulating capability is enhanced, but the aperture ratio is reduced due to increased light reflection
Solution Approach 1:
The patent extracts the silicon nitride layer from the insulating layer stack in the pixel region, reducing the number of interfaces from two (silicon oxide/silicon nitride and silicon nitride/conductive layer) to one (silicon oxide/conductive layer). This extraction directly increases the aperture ratio by eliminating unnecessary light-reflecting interfaces while maintaining adequate insulating capability through the silicon oxide layer.
3Reliability
If silicon oxide and silicon nitride layers are used to ensure proper insulation, then the electrical isolation is improved, but light reflection increases at the interface
Solution Approach 1:
The patent removes the silicon nitride layer in the pixel region, eliminating the harmful light reflection interface between silicon oxide and silicon nitride. The electrical isolation function is maintained through the silicon oxide layer alone and alternative insulating structures, demonstrating that the silicon nitride layer can be extracted without compromising essential electrical isolation in the light-critical pixel region.
Solution Approach 2:
The patent implements different insulating layer compositions in different regions: the pixel region uses only silicon oxide layer to minimize light reflection, while the non-pixel region uses both silicon oxide and silicon nitride layers for enhanced electrical isolation. This local quality differentiation allows each region to optimize for its primary function.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances light transmittance by minimizing the number of interfaces between silicon oxide and silicon nitride layers, thereby increasing the aperture ratio and improving the overall performance of the array substrate.
Implementation Method 1
the silicon oxide layer and the silicon nitride layer have different refractive indexes, so the interface thereof can easily partially reflect light
Data Source
AI summary
A display device is provided, which includes a substrate including a pixel region; a metal oxide semiconductor transistor disposed over the substrate and including: a metal oxide semiconductor layer, a first gate electrode overlapping with the metal oxide semiconductor layer; and a gate insulating layer disposed between the metal oxide semiconductor layer and the first gate electrode, and the gate insulating layer having a first opening, wherein the first opening and the pixel region overlap; a second insulating layer disposed over the metal oxide semiconductor layer and having a via and a second opening, wherein the second opening and the pixel region overlap; and a pixel electrode electrically connected to the metal oxide semiconductor layer through the via.