Transistor TRIZ Cases
- Vertical Thin Film Transistors With Self-Aligned Contacts
Vertical thin film transistors use dielectric spacers to define contact periphery and increase gate length without area penalty.
- Flexible Display Reinforced Insulating Layer Bending Resistance
An inorganic insulating layer incorporates organic-filled reinforcing holes to resolve the contradiction between insulation performance and bending resistance.
- Floating Gate Tip Formation via Pattern Duplication
Pattern duplication transfers hard mask recess profiles to floating gates, eliminating LOCOS bird's beaks and widening the process window.
- Signal Switching Apparatus Surge Current Dissipation
A signal switching apparatus uses a controlled surge current dissipation circuit to protect components from electrical damage.
- Fin-FET Contact Resistance Reduction via TiSiGe Silicide
Titanium-containing silicide layers form on doped epitaxial fins to lower contact resistance in Fin-FET devices.
- Solid State Imaging Device Phase Difference Detection Uniformity
A solid state imaging device aligns photoelectric conversion element positions to maintain uniform phase difference detection across the sensor array.
- Liquid Crystal Display Semiconductor Pattern Layer Diffusion Prevention
A semiconductor pattern layer with a diffusion prevention pattern blocks phosphorus migration in liquid crystal displays.
- Asymmetrical Bipolar ESD Protection Device for Bidirectional Energy Management
An asymmetrical bipolar ESD protection device manages bidirectional electrostatic discharge energy using shared collector regions and distinct emitter areas.
- 3D Semiconductor Stacking via Oxide-to-Oxide Bonding
Oxide-to-oxide bonding aligns semiconductor layers within 40 nm error, enabling high-density connections while maintaining wiring integrity below 400°C.