Semiconductor Device Horizontal Resistance Reduction

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Solution Overview

Problem

The resistance in semiconductor devices with flip chip mounting is increased due to the rectangular shape of the chip, where the longer length and narrower width of the current path on the chip surface lead to higher resistance, especially when a metal layer is not formed on the second main surface, relying on the higher resistance of the semiconductor substrate.

Innovation Solution

The semiconductor device is configured with elongated input and output electrodes on the long sides of the rectangular substrate, with the current path formed parallel to the short side, reducing the resistance by increasing the width and shortening the length of the current path, and omitting the metal layer on the second main surface to lower costs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If the current path is arranged along the long side of the rectangular chip, then the electrode layout is simplified, but the resistance increases due to longer path length and narrower width

Engineering Contradiction:
Improveelectrode layout complexityVSAvoidelectrical resistance
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent changes the orientation of the current path from longitudinal (along the long side) to transverse (along the short side), effectively utilizing a different spatial dimension to reduce resistance. By arranging electrodes and current paths to extend along the short side of the rectangular chip rather than the long side, the patent achieves lower resistance without complicating the electrode layout.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If a metal layer is formed on the second main surface to reduce resistance, then the horizontal resistance decreases, but the manufacturing cost increases

Engineering Contradiction:
Improvehorizontal resistanceVSAvoidmanufacturing cost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent extracts and eliminates the metal layer from the second main surface, relying instead on the optimized semiconductor substrate path along the short side to provide sufficient electrical conductivity. This removal of the metal layer reduces manufacturing complexity and cost while maintaining acceptable resistance levels through the geometric optimization of the current path.

Inventive Principle:
Principle #2Taking out (Extraction)

3Adaptability or versatility

If the chip uses a rectangular shape with electrodes on one main surface, then the flip chip mounting is enabled, but the resistance increases due to the substrate's higher resistance compared to metal layer

Engineering Contradiction:
Improvemounting method flexibilityVSAvoidelectrical resistance
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The patent changes the geometric parameters of the current path by orienting it along the short side of the rectangular chip, thereby reducing the path length and increasing the effective width. This parameter change compensates for the higher resistance of the semiconductor substrate compared to metal layers, achieving lower overall resistance while maintaining flip chip mounting capability.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS7915740B2Semiconductor device
Publication Date: 2011.03.29 SEMICON COMPONENTS IND LLC
  • US7915740B2 patent drawing
  • US7915740B2 patent drawing
  • US7915740B2 patent drawing

AI summary

Provided is a semiconductor device that can reduce the resistance in a horizontal direction of a substrate. A current path in a horizontal direction of a substrate is formed in a direction along a short side of the substrate (chip). For example, adopted is a layout in which an element region on an input terminal side and a current extraction region on an output terminal side are aligned along the short side of the chip. Furthermore, a first bump electrode and a second bump electrode, which are respectively connected to the input terminal and the output terminal, are arranged along the short side of the chip. Thus, the current path in the substrate in the horizontal direction in the substrate is formed to have a wide width and a short length. Accordingly, the resistance of the substrate in the horizontal direction is reduced.