Semiconductor Gate Electrode Fabrication Using Low-Energy Oxygen Plasma
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Solution Overview
Problem
Existing semiconductor fabrication methods face challenges in preventing oxidation of silicon substrates during plasma etching processes, leading to unintended recesses and damage, especially when high electron temperatures of oxygen plasma expose the substrate, resulting in suboptimal device manufacturing.
Innovation Solution
A method involving the formation of a gate electrode and insulating films on a semiconductor substrate, with an oxygen plasma exposure having an electron temperature of 1.5 eV or less to minimize oxidation, using a Radial Line Slot Antenna (RLSA) etching apparatus to balance deposition and etching, and employing specific gas conditions to protect the silicon surface during etching and ashing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high electron temperature oxygen plasma is used to remove deposited material, then deposition removal rate is improved, but oxidation of silicon substrate occurs causing unintended recesses and damage
Solution Approach 1:
The patent applies parameter changes by controlling the electron temperature of oxygen plasma to be 1.5 eV or less during the plasma treatment step. This specific parameter control allows the plasma to remove deposited material effectively while preventing oxidation of the silicon substrate, resolving the contradiction between deposition removal rate and substrate oxidation prevention
Solution Approach 2:
The patent employs preliminary action by forming an insulating film on the side surface of the gate electrode before plasma etching. This insulating film serves as a protective layer that prevents oxidation of the silicon substrate during subsequent plasma processing, while still allowing effective removal of deposited material
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively prevents deep oxidation and maintains high deposition removal rates, ensuring the semiconductor device is fabricated without unintended recesses, thereby ensuring the integrity and design specifications of the semiconductor device are met.
Implementation Method 1
exposing an oxygen plasma onto the surface of the substrate. An electron temperature of the oxygen plasma in a vicinity of the surface of the substrate is equal to or less than about 1.5 eV
Implementation Method 2
The insulating film may be an offset spacer, a side wall spacer, or the side wall spacer formed on the offset spacer
Data Source
AI summary
A method for fabricating a semiconductor device includes forming a gate electrode on a surface of a substrate via a gate insulating film, forming an insulating film on a side surface of the gate electrode, and exposing an oxygen plasma onto the surface of the substrate. An electron temperature of the oxygen plasma in a vicinity of the surface of the substrate is equal to or less than about 1.5 eV.