Transistor Gate Width Adjustment for Constant Resistance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional higher-voltage transistors face challenges in maintaining constant resistance per unit length of gate width when adjusted for different physical layouts, leading to variations in transistor characteristics.
Innovation Solution
The method involves adjusting the distance between the higher-concentration impurity-doped region and the device isolation layer based on changes in gate width, ensuring that the resistance per unit length remains constant, thereby maintaining identical characteristics across different transistor sizes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the gate width of a higher-voltage transistor is adjusted to accommodate different physical layouts, then the transistor can be configured to different sizes, but the resistance per unit length of gate width varies and transistor characteristics become different
Solution Approach 1:
The patent applies parameter changes by adjusting the distance between the higher-concentration impurity-doped region and the device isolation layer in proportion to gate width changes. When gate width increases, the distance is increased; when gate width decreases, the distance is decreased. This dynamic parameter adjustment maintains constant resistance per unit length of gate width across different transistor sizes, resolving the contradiction between adaptability and manufacturing precision.
2Manufacturing precision
If the gate width is kept constant to maintain identical transistor characteristics, then resistance per unit length remains consistent, but the transistor cannot be adapted to different physical layouts
Solution Approach 1:
The patent implements dynamics by making the distance between the higher-concentration impurity-doped region and the device isolation layer a variable parameter that dynamically adjusts with gate width. Instead of fixing the distance, the system allows it to change proportionally with gate width modifications, enabling transistors to adapt to different physical layouts while maintaining consistent resistance characteristics through controlled variation.
3Reliability
If the distance between higher-concentration impurity-doped region and device isolation layer is increased to reduce punchthrough, then breakdown voltage characteristics improve, but transistor size increases
Solution Approach 1:
The patent applies parameter changes by optimizing the distance between the higher-concentration impurity-doped region and the device isolation layer based on specific design requirements. By treating this distance as a可调 parameter rather than a fixed dimension, the patent enables optimization of breakdown voltage characteristics while controlling transistor area, allowing designers to achieve improved reliability without excessive size increase through precise parameter control.
Data Source
AI summary
A transistor, transistor arrangement and method thereof are provided. The example method may include determining whether a gate width of the transistor has been adjusted; and adjusting a distance between a higher-concentration impurity-doped region of the transistor and a device isolation layer of the transistor based on the adjusted gate width if the determining step determines the gate width of the transistor is adjusted. The example transistor may include a first device isolation layer defining a first active region, a first gate line having a first gate width and crossing over the first active region, a first lower-concentration impurity-doped region formed in the first active region at first and second sides of the first gate line and a first higher-concentration impurity-doped region formed in the lower-concentration impurity-doped region and not in contact with the gate line and the device-isolation layer.