Substrate Processing Apparatus Ion Trap Unit
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Solution Overview
Problem
Current methods for forming films on high-aspect-ratio grooves in semiconductor devices using plasma processing face challenges such as ion damage and electrification, which are detrimental to the quality and uniformity of the films, especially in sensitive processes like transistor manufacturing.
Innovation Solution
A substrate processing apparatus and method that incorporates a source gas supply system, a reactive gas supply system with a plasma generation unit and an ion trap unit, and an inert gas supply system to control the plasma generation and ion trap processes, ensuring minimal ion damage by trapping ions and using inert gases to prevent unwanted reactions and improve film quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If plasma processing is used to form films on high-aspect-ratio grooves, then reaction promotion and low-temperature processing are achieved, but ion damage and electrification occur degrading film quality
Solution Approach 1:
The gas supply system is segmented into multiple independent channels: source gas supply pipe, reactive gas supply pipe, and inert gas supply pipe. This segmentation allows independent control of each gas flow, enabling the reactive gas to be ionized for low-temperature processing while the inert gas suppresses ion damage, and the source gas forms the film, resolving the contradiction between temperature reduction and ion damage prevention.
Solution Approach 2:
An inert gas is introduced as an intermediary substance between the ionized reactive gas and the substrate. The inert gas acts as a mediator that suppresses the harmful ion bombardment while allowing the beneficial chemical reactions to proceed, thus protecting the substrate from ion damage during low-temperature plasma processing.
2Manufacturing precision
If alternate supply method with source gas and reactive gas is used, then film formation with good step coverage is achieved, but reaction control difficulty and film quality degradation occur due to unwanted reactions
Solution Approach 1:
The gas supply system is divided into separate independent pipes for source gas, reactive gas, and inert gas. This segmentation simplifies control by allowing each gas to be supplied independently without complex coordination, while still achieving the desired film formation with good step coverage through the controlled interaction of these separate streams.
Solution Approach 2:
An inert gas atmosphere is introduced into the processing chamber to suppress unwanted reactions between source gas and reactive gas. The inert gas creates a controlled environment that prevents premature or unwanted chemical reactions, allowing better control over film formation and improving film quality while simplifying the overall gas supply control.
3Manufacturing precision
If reactive gas is ionized to enable low-temperature processing, then film characteristics are improved, but ion damage occurs for each layer degrading overall film quality
Solution Approach 1:
An inert gas is introduced as an intermediary between the ionized reactive gas and the substrate. This intermediary suppresses the harmful ion bombardment that causes damage to each formed layer, while still allowing the ionized reactive gas to provide the necessary energy for low-temperature processing and good film characteristics. The inert gas effectively filters out the harmful ion component.
Solution Approach 2:
An inert gas atmosphere is created in the processing chamber to protect the formed film layers from ion damage. This inert environment allows the beneficial effects of ionized reactive gas (low-temperature processing capability and improved film characteristics) to be realized while preventing the accumulation of ion damage across multiple layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the formation of high-quality films with reduced ion damage, suitable for sensitive processes like transistor manufacturing, by effectively controlling plasma generation and ion trapping, resulting in improved film uniformity and characteristics.
Implementation Method 1
the reactive gas is ionized to form plasma. Thus, a film can be formed to have good characteristics even at a low temperature
Implementation Method 2
a plasma generation unit and an ion trap unit
Data Source
AI summary
A substrate processing apparatus includes a source gas supply system including a source gas supply pipe connected to a source gas source and a source gas supply controller; a reactive gas supply system including a reactive gas supply pipe connected to a reactive gas source, a reactive gas supply controller, a plasma generation unit and an ion trap unit and an inert gas supply pipe whereat an inert gas supply controller is disposed; a processing chamber supplied with a source gas by the source gas supply system and a reactive gas by the reactive gas supply system; and a control unit configured to control the gas supply controllers. The inert gas supply pipe has a downstream side connected between the reactive gas supply controller and the plasma generation unit and an upstream side connected to an inert gas supply source.