Oxide Semiconductor Contact Resistance Reduction via Ion Implantation
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Solution Overview
Problem
Current semiconductor devices with oxide semiconductors face challenges in achieving high-performance on-state characteristics and high-speed operation due to limitations in reducing contact resistance between the oxide semiconductor layer and electrode layers.
Innovation Solution
Introducing oxygen-defect-inducing factors such as titanium, tungsten, or aluminum into the oxide semiconductor layer using ion implantation or doping methods to create oxygen defects that act as donors, thereby reducing the resistance of the source and drain regions and improving contact resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If hydrogen or deuterium is diffused into the oxide semiconductor layer from source and drain electrodes, then the resistance of contact regions is reduced, but the on-state characteristics and high-speed operation performance are insufficient
Solution Approach 1:
The patent changes the chemical composition parameters by introducing oxygen-defect-inducing factors (metal elements with high oxygen affinity such as Ti, W, Mo, Al, Co, Zn, In, Si, or B) into the oxide semiconductor layer. This creates oxygen defects that act as donors, increasing carrier concentration and reducing resistance in source and drain regions, thereby improving both contact characteristics and on-state performance
Solution Approach 2:
The patent uses oxygen-defect-inducing factors as intermediary elements between the source/drain electrodes and the oxide semiconductor channel. These intermediary elements (metal atoms with high oxygen affinity) create oxygen vacancies that serve as electron donors, facilitating better electrical contact while maintaining high-speed operation capabilities
2Productivity
If the resistance of the oxide semiconductor layer is reduced by introducing donor factors, then on-state characteristics are improved, but the manufacturing process complexity increases
Solution Approach 1:
The patent merges the doping process with existing manufacturing steps by introducing oxygen-defect-inducing factors during the formation of source and drain electrodes or through subsequent ion implantation/doping steps that can be integrated into the standard TFT fabrication flow, thereby reducing overall process complexity
Solution Approach 2:
The patent utilizes standard ion implantation or doping techniques with modified parameters (introducing metal elements with high oxygen affinity instead of traditional dopants) to achieve the desired electrical characteristics, leveraging existing manufacturing equipment and processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the on-state characteristics and enables high-speed response and operation of semiconductor devices by effectively reducing the resistance of the oxide semiconductor layer, leading to improved electric characteristics and performance.
Implementation Method 1
oxygen-defect-inducing factors are selectively introduced into a formed oxide semiconductor layer by an ion implantation method or a doping method
Implementation Method 2
oxygen-defect-inducing factors are selectively introduced into a formed oxide semiconductor layer by an ion implantation method or a doping method
Data Source
AI summary
A transistor including an oxide semiconductor, which has good on-state characteristics, and a high-performance semiconductor device including a transistor capable of high-speed response and high-speed operation. In the transistor including an oxide semiconductor, oxygen-defect-inducing factors are introduced (added) into an oxide semiconductor layer, whereby the resistance of a source and drain regions are selectively reduced. Oxygen-defect-inducing factors are introduced into the oxide semiconductor layer, whereby oxygen defects serving as donors can be effectively formed in the oxide semiconductor layer. The introduced oxygen-defect-inducing factors are one or more selected from titanium, tungsten, and molybdenum, and are introduced by an ion implantation method.