Array Substrate Nanocrystalline Grain Structure
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Solution Overview
Problem
Current semiconductor photodetectors face challenges with low light absorption efficiency and slow response speed due to their double-layer structure, which limits their sensitivity and efficiency in converting light into current.
Innovation Solution
An array substrate with a semiconductor layer featuring a concave-convex structure formed by nanocrystalline grains is developed, enhancing light absorption by controlling the growth of these grains on a seed layer, and a double-layered semiconductor structure with differing carrier concentrations is used to improve mobility and light sensitivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a double-layer structure is used to adjust sensor performance, then threshold voltage control is improved, but light absorption efficiency deteriorates
Solution Approach 1:
The invention transitions from a flat double-layer structure to a three-dimensional concave-convex structure. The semiconductor layer is formed with a concave-convex surface morphology having peak-valley depth of 5-50 nm, which increases the light absorption path length and surface area without adding more functional layers, thus improving light absorption efficiency while maintaining the double-layer configuration for threshold voltage control.
Solution Approach 2:
The invention changes the physical parameters of the semiconductor layer by controlling the grain size of nanocrystals to 5-50 nm and forming a concave-convex surface morphology. This parameter change increases the light-matter interaction volume and surface area, thereby improving light absorption efficiency while the layered structure is preserved for electrical performance optimization.
2Device complexity
If conventional semiconductor layers are used, then device simplicity is maintained, but response speed deteriorates
Solution Approach 1:
The invention changes the material parameters by using nanocrystalline semiconductor materials with grain sizes of 5-50 nm. This nanoscale parameter change improves carrier mobility and reduces carrier transit time, thereby increasing response speed while maintaining the basic TFT device structure and fabrication process simplicity.
3Ease of manufacture
If flat semiconductor layers are used, then fabrication simplicity is maintained, but light sensitivity deteriorates
Solution Approach 1:
The invention introduces a vertical dimension to the semiconductor layer surface by creating a concave-convex morphology. This dimensional change increases the effective light absorption area and path length without requiring complex multi-layer stacking or additional fabrication steps, thus improving light sensitivity while maintaining fabrication simplicity through a single semiconductor layer deposition process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The concave-convex structure increases light absorption efficiency, enhances light sensitivity, and improves the response speed of semiconductor devices, effectively converting light into current, thereby addressing the limitations of existing technologies.
Implementation Method 1
a surface of the semiconductor layer away from the seed layer has a concave-convex structure formed by growth of nanocrystalline grains... The concave-convex structure increases light absorption efficiency
Implementation Method 2
light can be converted into current more effectively... effectively converting light into current
Data Source
AI summary
Embodiments of the present application provide an array substrate, a fabrication method for an array substrate, and a display panel. The array substrate includes a substrate, a gate, a gate insulating layer, a seed layer, and a semiconductor layer that are sequentially stacked. A surface of the semiconductor layer away from the seed layer has a concave-convex structure formed by growth of nanocrystalline grains, which enhances light absorption of the semiconductor layer and solves the problems of poor light sensitivity and slow response speed of semiconductor devices.