Solid-State Devices TRIZ Cases

A patterned protective layer shields phosphor during lamination, preserving micro-LED color conversion accuracy and uniform output.

Auxiliary through electrodes nested within connection vias improve heat dissipation while shrinking the footprint of stacked semiconductor dies.

A depth-dependent two-step CMP thins backside silicon selectively over active areas, avoiding costly SOI or etch-stop substrates.

Calculated layer-to-boundary distances compensate evaporation shadow width, improving OLED edge thickness uniformity and active-area yield.

Single-layer power, ground, and partition wiring in a mini-LED display panel cuts short-circuit risk while improving yield and lowering cost.

A rear reflective layer redirects Micro LED light toward the emission side while electrode extensions avoid overlap to preserve voltage input.

Staggered redistribution layers in recessed dielectric grooves raise chip RDL density while simplifying seed-layer processing and lowering short-circuit risk.

Integrating ECC and FBI circuits into a bonding chip enables a thinner 3D stacked semiconductor package with faster data handling and lower power.

A substrate opening enables wire bonding across stacked dies, cutting package height and cost without TSVs or flip-chip bumping.

Offset laser focusing cures solder through a heat radiation area, improving chip bonding precision while limiting direct heat damage.

Vacuum holes in a surrounding guide table stabilize lamination tape tension during wafer lamination, helping prevent semiconductor chip defects.

A dual protective film stack with different elastic moduli reduces substrate bouncing and degassing while supporting higher ion implantation throughput.

Vertically offset control logic above memory cells to shrink DRAM footprint while preserving line coupling through isolation layers.

Transmitted display light is captured by embedded photoelectric units to save energy while preserving color purity through wavelength-selective absorption.

A package substrate links photoelectric, processor, and power units through conductor patterns to cut signal delay and shorten power paths.

Spaced micro-LED pixel groups and an image conversion unit separate left-right light paths to cut 3D crosstalk while preserving resolution and luminance.

A third connection electrode adds side contact to randomly oriented light emitting elements, raising emission per unit area and easing yield limits.

By overlapping a film layer onto the Micro LED edge area, this case prevents pits, open circuits, and shorts during mass transfer.

A three-electrode contact scheme lets randomly oriented light-emitting elements emit reliably, raising display emission density and manufacturing yield.

A wavelength-selective optical component hides an embedded display sensor from view while passing near-infrared light for stable sensing.

Combining horizontal and vertical thin-film transistors on one gate layer improves display integration and reliability while supporting high-quality images.

A diffusion layer and transparent black-layer stack improve Micro-LED viewing angle while reducing white turbidity and preserving black impression.

Matched bump metal layer widths control bonding thickness variation, improving solder joint strength and bonding reliability in electronic assemblies.

A stacked LED pixel combines RGB sub-units with wafer-level bonding to cut micro-LED mounting steps and improve display manufacturing reliability.

A stacked transistor and signal-line layout cuts parasitic capacitance in high-resolution displays, reducing horizontal stripe spots at low brightness.

A filling element at tiled OLED panel boundaries reduces visible seams and gap effects, improving display appearance and operation.

A segmented semiconductor layer with varying widths guides and reflects light to improve emission efficiency while limiting added structural complexity.

Vertically stacked parallel capacitors raise capacitance without enlarging device area, while edge protective layers cut leakage current and improve reliability.

Structured electret surface potentials localize photoluminescent particle deposition, improving pad alignment and uniformity at small pixel pitches.

Phase and intensity modulation at the subscriber side cuts Rayleigh backscattering, extends optical access reach, and removes middle equipment.

Retarding hole or electron injection near the OLED emission layer cuts exciton quenching and limits efficiency roll-off at high brightness.

A stacked diode string between trench structures boosts ESD current paths in semiconductor power devices without using extra circuit area.

White oil openings expose pad areas so the stencil contacts the substrate, preventing abnormal soldering while preserving panel brightness.

A raised rib between LEDs reflects and redirects light toward the counter substrate, boosting luminance while reducing display power use.

Low-refractive color filters replace a separate optical layer to improve pixel luminance and color sense while simplifying display manufacturing.

A dielectric liner and metallic shield isolate the photoelectric device from the die to cut optical loss and improve coupling in compact packages.

Ground-state hydrogen radicals from a remote plasma deposit conformal silicon carbide films while limiting metal oxidation and unwanted bonds.

High-conductivity particles in light-converting, pixel define, and adhesive layers conduct heat away to preserve display quality and service life.

Protrusions on a transmissive light control layer improve LED light extraction, prevent color mixing, and maintain uniform luminance.

Varying LED chip heights compensate for phosphor and cover differences, keeping emission surfaces aligned for more uniform light output.

A fluid jet follows die streets to separate thinned semiconductor die with less stress, reducing chipping and cracking while maintaining precision.

Filler cells add routing space between standard cells, improving interconnect efficiency while reducing resistance and parasitic capacitance.

A common edge field device suppresses parasitic edge currents in LED chips, reducing recombination and stabilizing low-current efficiency.

A substrate blocker aligned with micro-LED connections shields laser light during die removal, preventing circuit damage and improving yield.

A laminated oxide-semiconductor and metal source-drain wiring stabilizes oxygen in TFTs, preserving initial characteristics and long-term reliability.

Barrier rib cells and electric-field seating improve micro-LED self-assembly precision while supporting efficient transfer of 30 μm or smaller LEDs.

A vertically stacked micro LED layout cuts subpixel area and mounting time while preserving brightness through independent drive and better heat handling.

Grooved inorganic-organic encapsulation and partition walls block moisture around panel openings while preserving display-area integration.

A U-shaped bottom electrode and conformal ferroelectric layer increase FRAM capacitor area while easing via alignment and improving reliability.