Barrier Rib Micro-LED Assembly for Precise Self-Placement

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Solution Overview

Problem

Existing display technologies face challenges such as slow response time, low efficiency, short lifespan, and difficulties in transferring millions of miniaturized semiconductor light emitting diodes for large-area displays, particularly with self-assembly methods.

Innovation Solution

A display device design featuring a base portion with first and second electrodes separated by a barrier rib portion, where semiconductor light emitting diodes are seated, and a manufacturing method using a magnetic field and electric field to assemble the diodes in a fluid chamber, allowing for precise placement and reduced misassembly.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If self-assembly method is used to transfer semiconductor light emitting diodes, then productivity is improved, but manufacturing precision deteriorates due to misassembly risks

Engineering Contradiction:
Improvetransfer efficiencyVSAvoidassembly precision
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The substrate is divided into multiple cells by barrier ribs, with each cell designed to accommodate exactly one semiconductor light emitting diode. This segmentation prevents misassembly by physically constraining the placement location of each LED, thereby maintaining high manufacturing precision while enabling efficient self-assembly transfer processes.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The barrier rib structure serves as an intermediary element between the substrate and the semiconductor light emitting diodes. These ribs create defined cellular spaces that guide and constrain the self-assembly process, ensuring that LEDs are placed precisely within their designated cells without requiring complex external positioning mechanisms.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Power

If barrier rib portion thickness is reduced to enhance electric field strength, then power is improved, but device complexity increases due to manufacturing challenges

Engineering Contradiction:
Improveelectric field strengthVSAvoidmanufacturing complexity
Core Design Contradiction:
PowerVSDevice complexity

Solution Approach 1:

The thickness of the barrier rib portion is optimized to 15 μm or less, which enhances the electric field strength between the first and second electrodes while maintaining manufacturability. This parameter change allows for stronger electric fields to guide the self-assembly process without requiring excessively complex manufacturing procedures, balancing power enhancement with practical fabrication constraints.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the assembly of miniaturized semiconductor light emitting diodes with sizes of 30 μm or less, enhancing electric field strength and reducing manufacturing complexity and costs while preventing misassembly and foreign material formation.

Implementation Method 1

forming an electric field by applying a voltage to the first electrode and the second electrode such that the semiconductor light emitting diodes are seated at a preset position

Methodology Applied
Scientific EffectElectric field: Electric Field

Implementation Method 2

applying a magnetic force to the semiconductor light emitting diodes put into the chamber containing the fluid so as to move in one direction

Methodology Applied
Scientific EffectMagnetic force: Magnetic Field

Data Source

PatentUS12356766B2Display device using semiconductor light-emitting element seated in plurality of cells of barrier rib portion
Publication Date: 2025.07.08 LG ELECTRONICS INC
  • US12356766B2 patent drawing
  • US12356766B2 patent drawing
  • US12356766B2 patent drawing

AI summary

Discussed is a display device including a base portion; a first electrode formed on the base portion; a barrier rib portion stacked on the first electrode while forming a plurality of cells; a second electrode formed on the barrier rib portion; and semiconductor light emitting diodes seated in the plurality of cells, wherein the first electrode and the second electrode are spaced apart from each other with the barrier rib portion disposed therebetween.