Quantum Dot LED Electron Blocking Layer Design

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Solution Overview

Problem

Conventional quantum dot light-emitting diodes face challenges in maintaining a balance between electrons and holes, leading to low light emission efficiency and reduced device lifetime due to the influence of electrons on the hole transporting layer.

Innovation Solution

Incorporating an electron blocking layer between the light-emitting layer and the hole transporting layer, utilizing quantum dots with smaller diameters to control electron mobility and prevent electron influence on the hole transporting layer, thereby enhancing device efficiency and stability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If an electron blocking layer is added to improve electron-hole balance, then device efficiency and lifetime are improved, but device structure becomes more complex

Engineering Contradiction:
Improvedevice lifetimeVSAvoiddevice structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The device is segmented into distinct functional layers, specifically adding an electron blocking layer between the light-emitting layer and hole transporting layer. This segmentation allows independent optimization of electron and hole transport pathways, improving electron-hole balance and device reliability without compromising overall structure.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

An electron blocking layer acts as an intermediary component between the light-emitting layer and hole transporting layer. This intermediary layer selectively blocks electrons while allowing holes to pass through, thereby improving electron-hole balance and preventing electron-induced degradation of the hole transporting layer, which extends device lifetime.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If quantum dots with smaller diameters are used to control electron mobility, then electron balance is improved, but manufacturing precision requirements increase

Engineering Contradiction:
Improveelectron balanceVSAvoidquantum dot size control
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent utilizes parameter changes by selecting quantum dots with specifically controlled small diameters (1-3 nm range) in the electron blocking layer. This parameter change in quantum dot size directly controls electron mobility and blocking efficiency, improving electron-hole balance while the patent provides guidance for manufacturing precision.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The electron blocking layer effectively improves the balance between electrons and holes, increasing device efficiency and extending the device's lifetime by maintaining electrons within the light-emitting layer and preventing their impact on the hole transporting layer.

Implementation Method 1

By disposing an electron blocking layer between the light-emitting layer and the hole transporting layer, a balance between the electrons and the holes is improved effectively. An influence of the electrons on the hole transporting layer is prevented.

Methodology Applied
Scientific EffectElectron blocking:

Implementation Method 2

The electrons with unstable excitation states in a quantum dot (QD) light-emitting diode transfer from the Highest Occupied Molecular Orbital (HOMO) to the Lowest Unoccupied Molecular Orbital (LUMO) and hence a luminescent phenomenon occurs.

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Implementation Method 3

A wavelength of light emitted from the quantum dots can be controlled by a size of the quantum dots so that by controlling the size of the quantum dots, the spectrum of visible light can be emitted.

Methodology Applied
Scientific EffectQuantum confinement effect:

Data Source

PatentUS11101441B2Quantum dot light-emitting diode and manufacturing method thereof
Publication Date: 2021.08.24 AU OPTRONICS CORP
  • US11101441B2 patent drawing
  • US11101441B2 patent drawing
  • US11101441B2 patent drawing

AI summary

A quantum dot light-emitting diode includes a substrate, an anode electrode layer, a cathode electrode layer, a light-emitting layer, and an electron blocking layer. The anode electrode layer is disposed on the substrate. The cathode electrode layer is disposed on the anode electrode layer. The light-emitting layer is disposed between the cathode electrode layer and the anode electrode layer. The light-emitting layer includes a plurality of first particles. The electron blocking layer is disposed between the light-emitting layer and the anode electrode layer. The electron blocking layer includes a plurality of second particles. The first particles and the second particles are quantum dots. A size of the second particles is smaller than a size of the first particles.