Dual Protective Films for Stable Semiconductor Substrate Processing

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Solution Overview

Problem

Existing semiconductor device manufacturing methods face challenges in efficiently protecting the semiconductor substrate during processing, particularly in preventing substrate bouncing during dechucking and improving throughput.

Innovation Solution

The method involves forming a first protective film and a second protective film with different elastic moduli and properties, where the second protective film is more resistant to deformation and has a lower degassing amount, allowing for improved handling and processing of the semiconductor substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a single protective film is used to cover the semiconductor substrate, then the structure is simple, but the substrate is prone to bouncing during dechucking and processing

Engineering Contradiction:

Improvesubstrate stabilityVSAvoidprotective film structure

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The protective film is divided into two distinct layers: a first protective film with high elastic modulus for structural support and bounce prevention, and a second protective film with low elastic modulus for conformal coverage and process compatibility. This segmentation allows each layer to perform its specialized function, preventing substrate bouncing while maintaining operational reliability.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent employs a composite protective film structure combining materials with different elastic moduli. The first protective film uses a rigid material for mechanical support, while the second protective film uses a flexible material for conformal coverage. This composite approach resolves the contradiction by integrating both structural stability and process compatibility in a single protective system.

Inventive Principle:

Principle #40Composite materials

2Reliability

If the protective film has high elastic modulus for structural support, then substrate bouncing is prevented, but the film generates excessive gas during processing

Engineering Contradiction:

Improvesubstrate supportVSAvoiddegassing amount

Core Design Contradiction:

ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The protective film system separates the structural support function from the low-degassing function into two distinct layers. The first protective film with high elastic modulus provides substrate support and prevents bouncing, while the second protective film with inherently low degassing characteristics eliminates excessive gas generation during processing.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The second protective film acts as an intermediary layer between the processing environment and the first protective film. This intermediate layer with low degassing properties prevents harmful gas generation during processing while allowing the first protective film to maintain its structural support function.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Productivity

If beam current is increased to improve processing throughput, then productivity increases, but substrate bouncing occurs during dechucking

Engineering Contradiction:

Improveprocessing throughputVSAvoidsubstrate stability

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The dual-layer protective film structure is formed in advance before ion implantation and dechucking operations. This preliminary protective structure ensures substrate stability is established beforehand, allowing subsequent processing steps including high beam current operations to proceed without substrate bouncing, thereby enabling improved productivity.

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the protection of the semiconductor substrate, reduces the risk of substrate bouncing, and improves processing throughput by allowing for increased beam current output during ion implantation.

Implementation Method 1

causing the ultraviolet curable resin film to be irradiated with ultraviolet to be cured

Methodology Applied

Scientific EffectPhotopolymerization: Photopolymerisation

Implementation Method 2

allowing for increased beam current output during ion implantation

Methodology Applied

Scientific EffectIon implantation: Ion Implantation

Data Source

PatentUS12341051B2Manufacturing method of semiconductor device

Publication Date: 2025.06.24 FUJI ELECTRIC CO LTD

AI summary

Provided is a manufacturing method of a semiconductor device comprising a semiconductor substrate which includes a first surface and a second surface which is on an opposite side of the first surface, the method comprising: a front surface processing for providing a first resist to the first surface of the semiconductor substrate and processing the first surface; a first protective film forming for forming a first protective film above the first surface of the semiconductor substrate; a second protective film forming for forming a second protective film above the first protective film, wherein a material of the second protective film is different from that of the first protective film; a back surface processing for processing the second surface of the semiconductor substrate; and a protective film removing for selectively removing the second protective film.