Array Substrate Wire Layout for Stable Pixel Reset Voltage
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Solution Overview
Problem
Existing display technologies face challenges in improving the display effect due to the complex arrangement of reset transistors and wires in pixel driving units, which can affect the overall performance of display panels.
Innovation Solution
The proposed array substrate design includes a substrate with a semiconductor active layer and a first metal layer, featuring specific wire segment arrangements and a shielding structure to optimize transistor performance and display effect.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If different reset transistors and reset wires are disposed in pixel driving units to reset anodes and gates of drive transistors, then the display effect is improved, but the arrangement complexity of semiconductor wires and metal wires increases
Solution Approach 1:
The scanning line is divided into multiple wire segments (first metal wire segment, second metal wire segment, third metal wire segment, fourth metal wire segment) that extend in different directions and overlap with different semiconductor wire segments at different locations. This segmentation allows the formation of multiple reset transistors with distinct gate and anode reset functions, improving display reliability while managing wiring complexity through structured division.
Solution Approach 2:
The patent utilizes spatial overlap in the vertical dimension between metal wire segments and semiconductor wire segments to form transistor structures. By arranging metal wire segments to overlap with semiconductor wire segments at different positions and orientations, the patent creates multiple reset transistors without requiring additional planar space, thus improving display effect while controlling arrangement complexity.
2Reliability
If the semiconductor wire and scanning line are arranged to form transistors, then the transistor performance is improved, but the voltage transmission distance on the semiconductor wire increases
Solution Approach 1:
The semiconductor wire is segmented into multiple segments (first semiconductor wire segment, second semiconductor wire segment, third semiconductor wire segment, fourth semiconductor wire segment) connected in series. Each segment forms transistors with overlapping metal wire segments at different locations. This segmentation distributes the voltage transmission function across multiple shorter segments rather than one long continuous wire, reducing the effective voltage transmission distance while maintaining transistor performance.
Solution Approach 2:
The patent introduces connection joints as intermediary structures between semiconductor wire segments. These connection joints serve as transition points that facilitate voltage transmission between segments while allowing the semiconductor wire to be arranged in a folded pattern. This intermediary approach enables the semiconductor wire to achieve sufficient length for forming multiple transistors while keeping each segment's voltage transmission distance manageable.
3Adaptability or versatility
If the semiconductor wire is extended to form multiple transistors, then the transistor functionality is improved, but the parasitic capacitance on the semiconductor wire increases
Solution Approach 1:
The semiconductor wire is divided into multiple segments that are connected through connection joints. Each segment forms transistors with metal wire segments at different locations. This segmentation isolates the parasitic capacitance effects to individual segments and connection joints rather than accumulating along a continuous long wire. The modular structure allows each segment to be optimized independently, improving transistor functionality while managing parasitic capacitance through distributed architecture.
Data Source
AI summary
Provided are an array substrate, a display panel and an electronic device. The array substrate includes a first scanning line located on a first metal layer and a semiconductor wire located on a semiconductor active layer. The first scanning line includes a first metal wire segment extending in a first direction and at least one second metal wire segment extending in a second direction from the first metal wire segment, and the first direction intersects with the second direction. The semiconductor wire includes a first semiconductor wire segment extending in the second direction and a second semiconductor wire segment extending in the first direction, and the first semiconductor wire segment is connected to the second semiconductor wire segment. The orthographic projection of the first metal wire segment on a substrate overlaps the orthographic projection of the first semiconductor wire segment on the substrate.


