Solid-State Devices TRIZ Cases

A dam structure controls underfill around a photonic die to buffer package stress while preserving mechanical support and electrical connectivity.

Multiple independent emitters in one LED chip raise display PPI while improving yield, lowering cost, and enabling better luminance control.

A metal nitride barrier layer blocks metal diffusion into electrode and dielectric layers, reducing TDDB and improving capacitor reliability.

A black material layer and tuned transparent layer thickness cut stray reflection and side emission to improve micro LED display contrast.

A 1.5× standard cell layout enables direct abutment across cell heights, cutting dummy OD areas while increasing active OD density.

A hazy, thicker sealing member around a bare LED chip cuts reflection at the transparent substrate and improves light extraction in displays.

A heat-resistant removable coating film blocks adhesive residue on semiconductor substrates and is stripped clean with alkaline liquid.

Harder and softer bump pairs with different diameters absorb misalignment and expand contact area in fine-pitch sensor arrays.

Serial charge-transfer switches and non-overlapping clocks generate deeper negative voltage while cutting chip area and current in memory chips.

Localized X-ray imaging aligns TSVs and reference marks during chip bonding, improving precision while limiting radiation damage.

Shared active regions within isolated pixel blocks cut quantum well defects, lowering micro-LED power use, heat, and crosstalk.

A V-pit active layer and sub-emission layer generate multiple wavelengths on one LED chip, avoiding phosphor loss and diode mixing.

Collimated emission and optical redirection recover large-angle light in head-up display optics, boosting brightness with lower power and heat.

Integrated LEDs project a pattern onto the inspected substrate, avoiding display-image delay and speeding camera and lens debugging.

A reverse-sloped auxiliary bank and contact opening improve electrode connection, supporting uniform large high-definition emission with lower power use.

Tapered structural surfaces disconnect common layers and opposite electrodes between adjacent pixels to stop leakage-driven light emission.

An exciplex transfers excitation energy to a fluorescent emitter, raising luminous efficiency while lowering drive voltage and power use.

A planar quantum well with a diffraction grating and lateral reflector converts blue LED light efficiently in micronic pixels.

Segmented adhesive patterns improve micro-LED die alignment during laser transfer, reducing skew, cracking, and rework.

Angled ion implantation compensates dopant loss in narrow polysilicon resistors, reducing tempco and resistance variability across linewidths.

Segmented light blocking paths and a semiconductor bypass redirect static electricity to prevent bright spots in the display area.

Overlapping IO power terminals with supply lines lowers ESD path resistance and improves tolerance without increasing IC area.

Conductive side covers, ribs, and a rear metal plate protect micro LED modules from static discharge while improving heat dissipation.

Interlayer metal in a multilayer 3D IC shortens stacked-device connections to cut resistance and capacitance while easing fabrication.

Vertical 1T1C stacking and lateral metal routing raise embedded memory density while limiting leakage, routing length, and cost.

Vertically stacked multi-color micro-LEDs share electrodes and use transparent bonding to preserve pixel resolution while improving brightness.

A reserve wafer and repair information block replace defective dies or IO segments to recover stacked wafer yield as wafer count increases.

Hybrid bonding, encapsulation, and through vias shrink stacked SoC-memory packages while improving bandwidth, latency, and bonding reliability.

Angled dams and cover layers confine filler-curing air bubbles in the display periphery, preventing electrode lifting and non-filling defects.

Intersecting common electrode portions equalize pad-group temperature during LED laser bonding, reducing element shift, rotation, and drop-off.

A die-formed coating cavity speeds LED waterproof encapsulation, cuts coating waste, and improves display durability and contrast.

Processing circuits in memory base dies use die-to-die links to expand compute and memory resources while limiting power and space.

Silver-gallium quantum dots with TiO2 improve blue light absorption, narrow emission width, and avoid cadmium toxicity in display panels.

Asymmetric tunneling-junction layer thickness and doping improve light output efficiency in micro- and nano-scale display LEDs.

Staggered stacked LEDs with insulating separation deliver uniform large-area lighting while reducing optics and pixel-control complexity.

A protruding insulating layer cuts μLED adhesive contact area, easing detachment and improving transfer yield to display substrates.

Concave LED mounting in stacked insulating substrates compensates for non-luminescent pixels, preserves display resolution, and keeps panels thin.

Insulating leveling layers fill LED height gaps so conductive lines avoid breakage, improving wafer-level full-color display yield.

Slotted antennas, photonic crystals, and converter materials help μ-LED arrays improve directional emission, brightness uniformity, and crosstalk.

Embedding separate CMOS control chips in mold compound stabilizes wafer-level LED stack integration before singulation.

A two-layer PSR layout enlarges the upper opening over the pad region to hide interconnections, improve bonding accuracy, and preserve black display quality.

Rounded trench corners plus thermal oxidation cut tip discharge, leakage current, and electrical overstress in deep trench capacitors.

Preformed select gate drain conductors reinforce tiered 3D NAND stacks, preventing bending during slit formation and preserving opening precision.

A boron-doped capping tier improves etch resistance during replacement gate processing, protecting 3D NAND features from corrosion damage.

A concave-center, convex-edge LED surface widens emission angle, cutting backlight LED count while preserving contrast and backlight sense.

Nano-imprinted optics and a stepped mesa structure focus micro-LED emission, cutting cross-talk and enabling denser optical communication arrays.

A low-resistance auxiliary electrode cuts common-electrode IR drop, improving luminance uniformity in inorganic LED display panels.

Embedding an optical interposer inside an interposer separates optical and electrical paths, enabling larger optics and ultra-low-loss waveguides.

A laminated light diffusion and black molding layer improves Micro LED visibility by reducing luminance loss and color change from the circuit board.

Segmented insulating films and a two-diameter element shape reduce etch defects, short-circuit risk, and lifetime loss in display emitters.