Pixel Insulating Layer Layout for Low Leakage and Higher Storage
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Solution Overview
Problem
Existing display devices face challenges in reducing resistance, minimizing current leakage, enhancing capacity value, and increasing storage capacity in pixels, which affects their display quality and efficiency.
Innovation Solution
The display device incorporates a structure with a first substrate, a first insulating layer, a second insulating layer, and a patterned metal layer. The thickness of the second insulating layer under the metal layer is increased to decrease resistance and reduce current leakage, while the thickness exposed from the opening region is decreased to improve capacity value and increase storage capacity in pixels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the thickness of the second insulating layer under the metal layer is increased, then resistance decreases and current leakage reduces, but the capacity value and storage capacity in pixels deteriorate
Solution Approach 1:
The patent applies local quality by varying the thickness of the second insulating layer at different locations: a first thickness under the metal layer (for low resistance and current leakage) and a second thickness in the opening region (for high capacity value and storage capacity). This spatial differentiation of thickness resolves the contradiction between reliability and storage capacity.
2Reliability
If the thickness of the second insulating layer under the metal layer is increased, then resistance decreases, but the capacity value and storage capacity in pixels deteriorate
Solution Approach 1:
The patent implements local quality by establishing different thickness values for the second insulating layer: a first thickness under the metal layer to achieve low resistance, and a second thickness in the opening region to maintain high capacity value and storage capacity, thereby resolving the contradiction between resistance and storage capacity.
3Quantity of substance
If the thickness of the second insulating layer exposed from the opening region is decreased, then capacity value and storage capacity in pixels improve, but resistance increases and current leakage increases
Solution Approach 1:
The patent applies local quality by setting different thickness values for the second insulating layer at different positions: a thinner second thickness in the opening region to improve capacity value and storage capacity, and a thicker first thickness under the metal layer to reduce resistance and current leakage, thereby resolving the contradiction between storage capacity and current leakage.
4Quantity of substance
If the thickness of the second insulating layer exposed from the opening region is decreased, then capacity value and storage capacity in pixels improve, but resistance increases
Solution Approach 1:
The patent implements local quality by establishing a thinner second thickness for the second insulating layer in the opening region to improve capacity value and storage capacity, while maintaining a thicker first thickness under the metal layer to ensure low resistance, thereby resolving the contradiction between storage capacity and resistance.
Data Source
AI summary
An electronic device includes: a substrate, a poly-silicon layer disposed on the substrate, a first metal layer disposed on the substrate, a first insulating layer disposed on the first metal layer, a second insulating layer disposed on the first insulating layer; and a second metal layer covering a part of the second insulating layer and electrically connected to the first metal layer. Wherein a thickness of the second insulating layer under the second metal layer is larger than a thickness of the second insulating layer uncovered with the second metal layer.