Display Insulating Layer Layout for Low Leakage and Higher Storage
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Solution Overview
Problem
Display devices, such as LCD and OLED, face challenges in reducing resistance, current leakage, and improving storage capacity to meet customer demands for enhanced display quality.
Innovation Solution
A display device structure featuring a first substrate with a first and second insulating layer, where the second insulating layer under the metal layer is thicker than that exposed, with the metal layer comprising conductive lines and an opening region, optimizing the thickness ratio to decrease resistance and increase storage capacity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the thickness of the second insulating layer under the metal layer is increased, then resistance decreases and current leakage reduces, but storage capacity in pixels decreases
Solution Approach 1:
The patent applies local quality by creating a thickness gradient in the second insulating layer, where the thickness varies depending on the location: thicker under the metal layer (for low resistance and current leakage) and thinner in the opening region (for high storage capacity). This spatial variation in thickness optimizes both contradictory requirements in different regions of the same structure.
2Reliability
If the thickness of the second insulating layer under the metal layer is increased, then resistance decreases, but device complexity increases
Solution Approach 1:
The patent changes the physical parameter of the second insulating layer thickness to resolve the contradiction. By adjusting the thickness parameter spatially (thicker under metal, thinner in openings), the patent achieves lower resistance without adding complex multi-layer structures or additional components, thus maintaining structural simplicity while improving electrical performance.
3Quantity of substance
If the thickness of the second insulating layer in the opening region is decreased, then storage capacity increases, but current leakage increases
Solution Approach 1:
The patent applies local quality by creating a thickness gradient in the second insulating layer, where the thickness varies depending on the location: thicker under the metal layer (for low resistance and current leakage) and thinner in the opening region (for high storage capacity). This spatial variation in thickness optimizes both contradictory requirements in different regions of the same structure.
Data Source
AI summary
An electronic device includes: a substrate, a poly-silicon layer disposed on the substrate, a first metal layer disposed on the substrate, a first insulating layer disposed on the first metal layer, a second insulating layer disposed on the first insulating layer; and a second metal layer covering a part of the second insulating layer and electrically connected to the first metal layer. Wherein a thickness of the second insulating layer under the second metal layer is larger than a thickness of the second insulating layer uncovered with the second metal layer.


