Imaging Sensor Light Shield Structure to Prevent Manufacturing Arcing
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Solution Overview
Problem
The manufacturing of imaging apparatuses faces defects due to arcing during processing steps, particularly with the first light shielding section, where the conductive light shielding material is in a floating state within the semiconductor substrate, leading to lattice defects.
Innovation Solution
Incorporating an electrically conductive section within the light shielding section that connects directly to the semiconductor substrate without an insulating film intervention, ensuring electrical conductivity and preventing arcing, while maintaining the light shielding function between the photoelectric converting and charge holding sections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a light shielding section with conductive light shielding material is formed between the photoelectric converting section and charge holding section, then light shielding function is improved, but arcing occurs during manufacturing causing lattice defects
Solution Approach 1:
An insulating film is introduced as an intermediary between the conductive light shielding material and the semiconductor substrate. This mediator prevents direct contact that would cause arcing during manufacturing, while still allowing the light shielding material to perform its light blocking function. The insulating film acts as a buffer that eliminates the harmful electrical interaction without compromising the optical shielding effect.
Solution Approach 2:
The light shielding structure is segmented into distinct functional layers: the conductive light shielding material layer and the insulating film layer. This segmentation separates the light shielding function from the electrical isolation function, allowing each layer to optimize its specific role without causing harmful interactions. The conductive material provides light shielding while the insulating film prevents arcing.
2Object-affected harmful factors
If the conductive light shielding material is placed in a floating state within the semiconductor substrate, then light shielding is achieved, but arcing occurs during processing steps
Solution Approach 1:
The insulating film serves as a mediator between the floating conductive light shielding material and the semiconductor substrate. This intermediary layer prevents the arcing that occurs during processing steps by eliminating direct electrical contact, while maintaining the light shielding material's position and light-blocking function within the substrate.
Solution Approach 2:
The electrical state of the light shielding material is changed from directly conductive to electrically isolated by introducing the insulating film. This parameter change in electrical conductivity at the interface prevents arcing during processing while maintaining the light shielding material's optical properties and spatial positioning.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration suppresses defects during manufacturing, enhancing the reliability and performance of the imaging apparatus by stabilizing the light shielding section's potential and reducing the risk of arcing, thereby improving the imaging apparatus's quality and efficiency.
Implementation Method 1
a photoelectric converting section that is disposed in a semiconductor substrate and that generates, by photoelectric conversion, charge according to an amount of received light
Data Source
AI summary
An imaging apparatus for which possible defects during manufacturing are suppressed is provided. An imaging apparatus 101 includes a photoelectric converting section 51 that is disposed in a semiconductor substrate 11 and that generates, by photoelectric conversion, charge according to an amount of received light, a charge holding section MEM that is disposed on a first surface 11A side of the photoelectric converting section 51 corresponding to a first surface 11A of the semiconductor substrate 11 opposite to a light incident surface of the semiconductor substrate 11 and that holds the charge transferred from the photoelectric converting section 51, and a light shielding section 12 that is disposed between the photoelectric converting section 51 and the charge holding section MEM and that surrounds at least a part of the charge holding section MEM, and the light shielding section 12 includes an electrically conductive section 12C that is a partial region of the light shielding section 12 and that is electrically conductive with the semiconductor substrate 11.