ZRAM Floating-Body Structure for Non-Destructive Low-Power Read

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Solution Overview

Problem

Current ZRAM memory devices use a destructive current sensing method for memory read operations, which consumes large amounts of power and is not non-destructive.

Innovation Solution

The implementation of a compact ZRAM device structure with a read method utilizing gate oxide tunneling current and a writing mechanism through gate current, featuring a thin gate oxide and a junction engineered diode, allowing for non-destructive read operations with ultra-low power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If current sensing method is used for memory read, then read operation can be performed, but power consumption is large and read is destructive

Engineering Contradiction:

Improvenon-destructive readVSAvoidpower consumption

Core Design Contradiction:

ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent replaces the conventional current sensing method with a voltage sensing method based on gate oxide tunneling current. Instead of measuring current directly (which is destructive and power-intensive), the invention uses voltage changes in the floating body region that result from tunneling current, enabling non-destructive, ultra-low power read operations

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent introduces a floating body region as an intermediary between the storage node and the sensing mechanism. This floating body accumulates charge carriers through tunneling current and translates them into voltage changes that can be sensed without directly measuring the stored data current, thereby enabling non-destructive reading

Inventive Principle:

Principle #24Intermediary (Mediator)

2Ease of operation

If conventional memory read method is used, then read operation is simple, but it is destructive and consumes large power

Engineering Contradiction:

Improveread operation simplicityVSAvoidpower consumption

Core Design Contradiction:

Ease of operationVSLoss of energy

Solution Approach 1:

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Use of energy by moving object

If thin gate oxide is used, then ultra-low power consumption is achieved, but manufacturing precision requirements increase

Engineering Contradiction:

Improvepower consumptionVSAvoidgate oxide thickness control

Core Design Contradiction:

Use of energy by moving objectVSManufacturing precision

Solution Approach 1:

The patent employs a thin gate oxide (5-15 nm) to enable quantum tunneling current for write operations and voltage sensing for read operations. This parameter change allows ultra-low power consumption by eliminating the need for high-current sensing, though it does require precise manufacturing control to achieve the desired thickness and uniformity

Inventive Principle:

Principle #35Parameter changes

Data Source

PatentUS20230420561A1Memory devices

Publication Date: 2023.12.28 GLOBALFOUNDRIES US INC

AI summary

The present disclosure relates to semiconductor structures and, more particularly, to memory devices and methods of manufacture. The structure includes: a gate structure having a gate dielectric material and a gate body; a body region under the gate dielectric material; a first doped region laterally adjacent to a first side of the body region; a second doped region laterally adjacent to the first doped region; and a shallow trench isolation structure laterally adjacent to a second side of the body region.