Stacked Channel Transistor Layout for Isolation and Reliability
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high integration and reliability due to limitations in device isolation and transistor design, particularly in the alignment and separation of active patterns and channel patterns, which affect electrical characteristics and durability.
Innovation Solution
The semiconductor devices incorporate a design with first and second active patterns separated by trenches, featuring sequentially stacked semiconductor patterns and gate spacers that cover sidewalls, along with dummy gate electrodes and gate dielectric patterns, to enhance integration and reliability by reducing source/drain pattern degradation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If active patterns are closely spaced to increase integration density, then device integration is improved, but reliability deteriorates due to increased stress and degradation
Solution Approach 1:
The active pattern is divided into multiple segments separated by trenches. This segmentation reduces stress concentration in any single region and isolates degradation effects, allowing higher integration density while maintaining reliability through physical separation of stress zones.
Solution Approach 2:
Trenches filled with dummy gate electrodes and gate spacers serve as intermediary structures between adjacent active patterns. These intermediaries buffer mechanical stress and prevent stress-induced degradation from propagating between closely spaced active patterns, enabling higher integration without sacrificing reliability.
2Productivity
If device dimensions are reduced to increase integration, then integration density is improved, but manufacturing precision requirements worsen
Solution Approach 1:
The design introduces vertical stacking of channel patterns (multiple channels per active pattern) and uses trenches extending in the depth direction. This dimensional transition from 2D planar scaling to 3D vertical integration allows increased device capacity without proportionally reducing lateral feature sizes, thereby easing manufacturing precision requirements while maintaining integration density.
3Reliability
If complex device structures are implemented to improve performance, then device performance is improved, but device complexity increases
Solution Approach 1:
The dummy gate electrodes and gate spacers serve multiple functions: they act as stress buffers, provide structural support, define trench boundaries, and can be integrated with actual gate structures. This multi-functionality reduces the need for separate dedicated structures, thereby improving performance without proportionally increasing device complexity.
Data Source
AI summary
Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include first and second active patterns on a substrate. Each of the first and second active patterns may extend in a first direction. The first and second active patterns may be aligned along the first direction and may be separated by a first trench extending in a second direction. The first trench may define a first sidewall of the first active pattern. The semiconductor devices may also include a channel pattern including first and second semiconductor patterns stacked on the first active pattern, a dummy gate electrode on the channel pattern and extending in the second direction, and a gate spacer on one side of the dummy gate electrode, the one side of the dummy gate electrode being adjacent to the first trench. The gate spacer may cover a first sidewall of the first active pattern.