LED Chip Layout for High-PPI Displays With Independent Emitters

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Solution Overview

Problem

Existing light-emitting diode (LED) chip manufacturing processes face challenges in achieving high pixels per inch (PPI) due to size limitations, low yield, high manufacturing costs, and difficulty in controlling luminance, especially when driven by small currents or high voltages, which complicates the integration of multiple LEDs on a display substrate.

Innovation Solution

The LED chip design includes multiple second conductive type semiconductor layers and electrodes, allowing for independent light-emitting structures within a single chip, reducing the size of each structure while maintaining overall chip size, and employing a flip-chip or vertical structure to enhance efficiency and ease of manufacturing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If multiple light-emitting structures are integrated into a single LED chip, then pixels per inch is increased, but manufacturing complexity increases

Engineering Contradiction:
Improvepixels per inchVSAvoidmanufacturing complexity
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The LED chip is divided into multiple independent light-emitting structures, each comprising separate first and second conductive type semiconductor layers with independent electrodes. This segmentation enables multiple pixels per chip, increasing PPI while maintaining manageable manufacturing complexity through modular design

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The first conductive type semiconductor layer serves as a shared component for multiple light-emitting structures, while each structure has its own second conductive type semiconductor layer and electrodes. This multi-functional design reduces redundant elements and simplifies the manufacturing process

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Quantity of substance

If the size of individual light-emitting structure is reduced, then pixels per inch is increased, but manufacturing precision requirements increase

Engineering Contradiction:
Improvepixels per inchVSAvoidmanufacturing precision
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The patent transitions from planar arrangement to vertical stacking of semiconductor layers, creating light-emitting structures in the thickness direction. This dimensional change allows smaller effective pixel area without proportionally increasing manufacturing precision requirements, as the structures are defined by layer thickness rather than lateral dimensions

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Quantity of substance

If multiple second conductive type semiconductor layers are used, then independent light-emitting structures are formed, but device complexity increases

Engineering Contradiction:
Improvenumber of light-emitting structuresVSAvoiddevice complexity
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

Multiple second conductive type semiconductor layers are merged with a single first conductive type semiconductor layer to form multiple independent light-emitting structures. This combining approach reduces the total number of semiconductor layers needed compared to having completely separate LED structures, thereby reducing device complexity while maintaining multiple light-emitting functions

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design enables higher PPI, improves manufacturing yield and reduces costs by allowing smaller, more efficient light-emitting structures, and enhances luminance control under small current drive.

Implementation Method 1

Light-emitting diode (LED) is a semiconductor device that emits light by recombination of electrons and holes

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS20250366284A1Light-Emitting Diode Chip, Display Substrate and Manufacturing Method Thereof
Publication Date: 2025.11.27 BOE MLED TECH CO LTD
  • US20250366284A1 patent drawing
  • US20250366284A1 patent drawing
  • US20250366284A1 patent drawing

AI summary

A display substrate, which includes a plurality of first light-emitting diode chips, each first light-emitting diode chip includes a plurality of light-emitting structures, the first substrate comprises a first pixel and a second pixel, the first pixel comprises a light-emitting structure of one first type light-emitting diode chip and a light-emitting structure of one second type light-emitting diode chip, the second pixel comprises a light-emitting structure of one first type light-emitting diode chip and a light-emitting structure of one second type light-emitting diode chip, the first type light-emitting diode chip included in the first pixel and the first type light-emitting diode chip included in the second pixel are the same first type light-emitting diode chip, the second type light-emitting diode chip included in the first pixel and the second type light-emitting diode chip included in the second pixel are different second type light-emitting diode chips.