Oxide Semiconductor Gate Electrode for Hydrogen-Induced Stability
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Solution Overview
Problem
Transistors using oxide semiconductors in display devices face reliability issues due to oxygen deficiencies caused by hydrogen emission from insulating layers, leading to unstable electrical characteristics and reduced performance.
Innovation Solution
Incorporating a gate electrode with hydrogen storage properties, such as titanium or magnesium, to absorb hydrogen and reduce oxygen deficiencies in the oxide semiconductor layer, thereby stabilizing the transistor's electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Force
If hydrogen-containing layers are used as insulating layers, then insulating properties are improved, but hydrogen emission causes oxygen deficiencies in oxide semiconductor leading to unstable electrical characteristics
Solution Approach 1:
The patent converts the harmful hydrogen emission from insulating layers into a beneficial effect by introducing a hydrogen storage layer that deliberately absorbs hydrogen. This storage layer acts as a sink for hydrogen atoms that would otherwise migrate to and reduce the oxide semiconductor, thereby preventing electrical characteristic instability while maintaining the insulating properties of hydrogen-containing layers.
Solution Approach 2:
The hydrogen storage layer serves as an intermediary between the hydrogen-containing insulating layer and the oxide semiconductor. It intercepts hydrogen atoms emitted from the insulating layer before they can reach the oxide semiconductor, thus mediating the harmful interaction and protecting the semiconductor while allowing the insulating layer to maintain its hydrogen-containing composition for electrical insulation.
2Reliability
If more oxygen is supplied to oxide semiconductor to reduce oxygen vacancies, then transistor operation stability is improved, but hydrogen emission from insulating layers still causes reduction and oxygen deficiencies
Solution Approach 1:
The patent applies preliminary anti-action by placing a hydrogen storage layer between the hydrogen-containing insulating layer and the oxide semiconductor before hydrogen emission can cause damage. This storage layer preemptively captures hydrogen atoms, preventing them from reaching and reducing the oxide semiconductor, thus counteracting the harmful effect before it occurs.
Solution Approach 2:
The patent converts the harmful hydrogen emission into a beneficial effect by using the hydrogen storage layer to deliberately absorb and trap hydrogen atoms. This transforms the problematic hydrogen emission into a controlled hydrogen storage mechanism that protects the oxide semiconductor while maintaining the necessary hydrogen-containing insulating layers for electrical insulation.
3Reliability
If hydrogen storage layer is introduced to prevent hydrogen emission effects, then electrical characteristics stability is improved, but device structure complexity increases
Solution Approach 1:
The hydrogen storage layer is integrated into the existing transistor structure as an additional functional layer that serves multiple purposes: it stores hydrogen to prevent reduction of oxide semiconductor, maintains electrical insulation properties, and can be formed using standard sputtering techniques. This multi-functionality minimizes the impact on overall device complexity while providing the necessary protection.
Solution Approach 2:
The patent controls the thickness and composition parameters of the hydrogen storage layer to optimize its hydrogen absorption capacity while minimizing structural complexity. By carefully adjusting these parameters, the layer provides effective hydrogen storage functionality without excessively increasing device complexity or manufacturing difficulty.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses fluctuations in electrical characteristics and enhances the reliability of the display device by reducing hydrogen-induced defects in the oxide semiconductor layer.
Implementation Method 1
The first gate electrode has hydrogen storage properties
Implementation Method 2
The first gate electrode includes a first conducive layer capable of forming a metal hydride on a surface of the first conducive layer
Data Source
AI summary
A display device includes a first transistor. The first transistor includes an oxide semiconductor layer, a first gate electrode facing the oxide semiconductor layer and a gate insulating layer between the oxide semiconductor layer and the first gate electrode. The first gate electrode has hydrogen storage properties.