Epitaxial Micro-LED Display Integration for Higher Manufacturing Yield
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Solution Overview
Problem
Current display device manufacturing processes face challenges in achieving high yield due to the complexity of aligning and integrating light emitting elements, which affects the efficiency and reliability of the final product.
Innovation Solution
A display device design that includes a pixel circuit layer with a transistor, a sapphire substrate for epitaxial growth, and an inorganic light emitting element with a specific layered structure, where the light emitting element is integrated with an electrode that electrically connects to the transistor, and a method for manufacturing this device using epitaxial growth techniques and anisotropic etching to simplify the alignment process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional alignment and integration processes are used for light emitting elements, then manufacturing complexity increases, but manufacturing yield decreases
Solution Approach 1:
The patent merges the light emitting element fabrication process with the substrate processing by forming the light emitting element directly on the substrate using epitaxial growth. This integration eliminates separate alignment and assembly steps, reducing manufacturing complexity while improving yield through a unified fabrication process.
Solution Approach 2:
The patent performs preliminary preparation of the substrate surface and forms buffer layers before epitaxial growth of the light emitting element. This preliminary action ensures proper nucleation and growth conditions, simplifying subsequent processing steps and improving manufacturing reliability.
2Productivity
If epitaxial growth technique is used for light emitting element formation, then manufacturing efficiency improves, but process precision requirements increase
Solution Approach 1:
The patent controls epitaxial growth by precisely adjusting parameters such as temperature, pressure, and gas flow rates during the growth process. This parameter control enables high manufacturing efficiency while maintaining the required precision through systematic optimization of growth conditions.
Solution Approach 2:
The patent introduces buffer layers as intermediaries between the substrate and the light emitting element. These buffer layers facilitate the epitaxial growth process by providing a controlled interface, reducing the precision requirements for direct substrate-to-element growth while maintaining manufacturing efficiency.
3Reliability
If inorganic light emitting elements with layered structure are used, then electrical stability improves, but device complexity increases
Solution Approach 1:
The patent segments the light emitting element into distinct functional layers (buffer layer, active layer, contact layer) with specific roles. This segmentation provides electrical stability through optimized carrier transport in each layer while managing complexity through clear functional differentiation and standardized fabrication processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the manufacturing yield and efficiency by simplifying the integration of light emitting elements, improving the electrical stability and lifespan of the display device, and allowing for the production of high-quality display panels with improved light output efficiency.
Implementation Method 1
The growth substrate may be a base layer for epitaxial growth of the light emitting element
Implementation Method 2
a method for manufacturing this device using epitaxial growth techniques and anisotropic etching to simplify the alignment process
Data Source
AI summary
A display device includes a pixel circuit layer including a transistor, a growth substrate disposed on the pixel circuit layer, a light emitting element disposed on the growth substrate, and an electrode disposed on the light emitting element and electrically connecting the light emitting element and the transistor.