SPAD Pixel Multiplier Layout for Uniform Photon Detection

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Solution Overview

Problem

Fully depleted SPADs face large variations in characteristics such as breakdown voltage, photon detection efficiency, and dead time due to large depletion regions, leading to inconsistent performance across pixels in photodetection devices.

Innovation Solution

A photodetection device with pixels that include multiple multipliers coupled in parallel and series to a photoelectric converter, along with a quench section, which reduces characteristic variations by optimizing the electric field and avalanche probability, and uses a semiconductor substrate with specific impurity regions and ion implantation for improved efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a large depletion region is used in fully depleted SPAD, then high collection efficiency and high avalanche probability are achieved, but large variations among pixels in characteristics including VBD, PDE, and DT occur

Engineering Contradiction:
Improvecollection efficiencyVSAvoidcharacteristic variations among pixels
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The pixel structure is segmented into distinct functional regions: a photoelectric converter region for photon detection, a transfer path region for electron transport, and a multiplier region for signal amplification. This segmentation allows each region to be independently optimized, with the depletion region confined to specific areas rather than spanning the entire pixel, thereby reducing characteristic variations while maintaining high collection efficiency in the photoelectric converter and high avalanche probability in the multiplier regions

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the pixel are assigned different electrical properties and doping concentrations tailored to their specific functions. The photoelectric converter has optimized doping for high quantum efficiency, the transfer path has controlled doping for efficient electron transport, and the multiplier has specific doping profiles for high avalanche probability. This local optimization reduces variations in breakdown voltage and other characteristics across pixels

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If multiple multipliers are coupled in parallel and series to the photoelectric converter, then characteristic variations among pixels are reduced, but device complexity increases

Engineering Contradiction:
Improvecharacteristic uniformity among pixelsVSAvoidmultiplier configuration complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

Multiple multiplier units are combined in a standardized configuration where they are coupled in parallel to the photoelectric converter and then connected in series to the quench section. This merging approach creates a uniform structure across pixels that reduces characteristic variations. The standardized coupling method simplifies the manufacturing process despite the increased number of components, as the same connection pattern is replicated across all pixels

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The multiplier configuration serves multiple functions simultaneously: signal amplification through avalanche multiplication, characteristic uniformity across pixels through standardized coupling, and integrated quenching through the shared quench section. This multi-functionality reduces the need for additional separate components, thereby managing device complexity while achieving characteristic uniformity

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances photon detection efficiency, reduces wiring capacitance, and minimizes variations among pixels, leading to improved quantum efficiency and reduced jitter and degradation in photon detection efficiency.

Implementation Method 1

Each of the pixels includes a photoelectric converter

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 2

a high avalanche probability is achieved owing to an efficient rise of an electric field in the depletion region

Methodology Applied
Scientific EffectAvalanche breakdown: Avalanche Breakdown

Data Source

PatentUS20240395961A1Photodetection device, imaging device, and distance measurement apparatus
Publication Date: 2024.11.28 SONY SEMICON SOLUTIONS CORP
  • US20240395961A1 patent drawing
  • US20240395961A1 patent drawing
  • US20240395961A1 patent drawing

AI summary

A photodetection device according to an aspect of the present disclosure includes a plurality of pixels arranged two-dimensionally. Each of the pixels includes: a photoelectric converter, a plurality of multipliers coupled in parallel to each other and coupled in series to the photoelectric converter, and a quench section coupled to the plurality of multipliers on a side opposite to a coupling side to the photoelectric converter.