Gate Pad Insulation Layout for Dense 3D Memory Contacts
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Solution Overview
Problem
Existing semiconductor devices face challenges in reducing the distance between circuit elements for improved integration and performance while minimizing defects and performance degradation due to large-area stacking structures.
Innovation Solution
A semiconductor device design featuring a gate stacking structure with interlayer insulation layers and gate electrodes, a channel structure, and a pad insulation layer with obtuse angles or rounded portions to reduce the device area and prevent defects at corners, enhancing performance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the stacking structure area is reduced to improve device integration, then device area decreases and integration improves, but defects and performance degradation increase due to stress and thermal deformation
Solution Approach 1:
The pad insulation layer is designed with rounded corners instead of sharp angles. This curvature prevents stress concentration at corner regions, reducing the likelihood of cracks and defects while maintaining a compact device area. The rounded portions allow the stacking structure to be minimized without compromising reliability.
Solution Approach 2:
The shape parameters of the pad insulation layer are optimized by introducing obtuse angles and rounded portions. This geometric parameter change redistributes stress fields and thermal deformation patterns, preventing defect formation even when the overall device area is reduced for better integration.
2Productivity
If the distance between circuit elements is reduced to improve integration degree, then integration degree improves, but manufacturing precision and defect control become more difficult
Solution Approach 1:
The pad insulation layer is designed with non-uniform geometry, featuring rounded corners and obtuse angles at critical regions where stress concentration would normally occur. This local geometric optimization maintains manufacturing precision and defect control even as the overall device scale is reduced to improve integration degree.
3Ease of manufacture
If the pad insulation layer has sharp corners to simplify manufacturing, then manufacturing complexity decreases, but stress concentration and defects increase
Solution Approach 1:
The pad insulation layer incorporates rounded corners and obtuse angles that eliminate sharp corners. This geometric modification prevents stress concentration while remaining compatible with standard semiconductor manufacturing processes, thus not significantly increasing manufacturing complexity.
Solution Approach 2:
The pad insulation layer features asymmetric corner design with rounded portions at specific locations where stress concentration would occur. This asymmetric geometry optimizes stress distribution without requiring complex manufacturing steps, maintaining ease of manufacture while reducing harmful stress effects.
Data Source
AI summary
A semiconductor device includes a cell region including a cell array region and a connection region. The cell region includes a gate stacking structure, a channel structure, a pad insulation layer, and a plurality of gate contact portions. The gate stacking structure includes interlayer insulation layers and gate electrodes alternately stacked and extending in a first direction. The channel structure passes through the gate stacking structure in the cell array region. The pad insulation layer is disposed in a recess portion where a partial portion of the gate stacking structure is removed to expose pad portions of the gate electrodes in the connection region. The gate contact portions pass through the pad insulation layer and are electrically connected to the gate electrodes, respectively. The pad insulation layer includes a corner of an obtuse angle or the pad insulation layer includes a rounded portion in a plan view.