Ga2O3-Si Semiconductor Module Layout for Low-Parasitic Switching
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Solution Overview
Problem
The existing power semiconductor modules suffer from increased electrical parasitic components due to longer wire and metal line connections, which deteriorate switching characteristics, leading to larger volumes and reduced reliability.
Innovation Solution
A semiconductor module design featuring a substrate with alternating gallium oxide (Ga2O3) and silicon (Si) semiconductor layers, separated by an insulator, minimizes wire and metal line length, reducing parasitic components and improving switching characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the gate driver is located outside the power module, then the control circuit can be designed with various functions (protection circuit, temperature sensor, current sensor), but the wire and metal line length increases, leading to increased electrical parasitic components and deteriorated switching characteristics
Solution Approach 1:
The patent merges the gate driver control circuit with the power module by fabricating both on the same semiconductor substrate. The control circuit and power semiconductors are integrated in a planar structure, eliminating the need for external wire connections and significantly reducing parasitic inductance and capacitance while maintaining all required control functions
2Ease of operation
If the wire and metal line length is increased to connect power semiconductors and gate driver, then the connection is more flexible, but electrical parasitic components (capacitance, inductance) are increased
Solution Approach 1:
The patent replaces the mechanical wire connection system with an integrated semiconductor circuit structure. The control circuit and power devices are connected through short on-chip metal traces instead of external wires, eliminating the mechanical connection system and its associated parasitic elements
3Adaptability or versatility
If longer wire and metal line connections are used, then the system can accommodate different configurations, but the volume of passive devices inside and outside the system increases
Solution Approach 1:
The patent combines the control circuit and power devices in a single integrated module, eliminating the need for separate passive components that would be required in distributed configurations. The integration reduces the overall system volume by consolidating functionality into a compact planar structure
Data Source
AI summary
Disclosed is a semiconductor module including a substrate, a first semiconductor layer positioned on the substrate, an insulator positioned in a partial region on the first semiconductor layer, a second semiconductor layer positioned on the insulator, a first semiconductor device formed on the first semiconductor layer, and a second semiconductor device formed on the second semiconductor layer, wherein one of the first semiconductor layer and the second semiconductor layer includes gallium oxide (Ga2O3) and the other includes silicon (Si).