Micro-LED Pixel Layout With Overlapping TFT Source Electrode
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Solution Overview
Problem
Existing display technologies, such as LCDs and AMOLEDs, face challenges with slow response time, flexibility, and yield issues, while semiconductor light emitting diodes (LEDs) offer a solution for flexible displays but require efficient arrangement within limited pixel spaces.
Innovation Solution
A display device structure is designed with a thin film transistor and semiconductor light emitting diodes where one of the p-type or n-type electrodes overlaps the source electrode, utilizing a specific transistor configuration and manufacturing method to optimize space utilization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If a conventional thin film transistor structure is used with separate source and drain electrodes, then the transistor can be manufactured using standard photolithography, but the pixel area occupied is larger and space utilization is inefficient
Solution Approach 1:
The source electrode and one electrode of the semiconductor light emitting device are merged into a single overlapping structure. The source electrode extends beneath the semiconductor light emitting device, eliminating the need for separate source and drain electrodes in the conventional sense, thereby reducing pixel area while maintaining transistor functionality
Solution Approach 2:
The transistor structure transitions from a planar layout to a three-dimensional overlapping configuration. The gate electrode is positioned above the source electrode with vertical spacing, creating a stacked arrangement that reduces the horizontal footprint within the pixel area
2Manufacturing precision
If the pixel size is reduced to increase resolution, then higher display resolution is achieved, but the space available for arranging transistor and LED components becomes insufficient
Solution Approach 1:
The source electrode is nested beneath the semiconductor light emitting device, with the gate electrode positioned above the source electrode. This nested, multi-layer arrangement allows all essential components to occupy overlapping vertical space rather than requiring separate horizontal space, enabling smaller pixel sizes while maintaining component functionality
Solution Approach 2:
Components are arranged in vertical layers rather than horizontal sequences. The gate electrode is positioned at a higher vertical level above the source electrode, creating a three-dimensional configuration that reduces the two-dimensional footprint required for each pixel
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This arrangement allows for efficient use of pixel space, enabling flexible and high-resolution displays with improved yield and brightness, suitable for various electronic devices.
Implementation Method 1
light emitting diodes (LEDs) offer a solution for flexible displays
Implementation Method 2
light emitting diodes (LEDs) are well known light emitting devices for converting an electrical current to light
Data Source
AI summary
Discussed is a display device including a substrate, a thin film transistor formed on the substrate, the thin film transistor including a source electrode, a drain electrode, and a gate electrode, and a plurality of semiconductor light emitting devices emitting light so as to each form individual pixels and each having a p-type electrode and an n-type electrode, wherein at least one of the plurality of of the semiconductor light emitting devices is disposed so that one of the p-type electrode and the n-type electrode overlaps the source electrode of the thin film transistor.