Semiconductor Substrate Division with Dynamic Tape Adhesion
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Solution Overview
Problem
Existing methods face challenges in dividing semiconductor substrates with retaining tapes due to either strong adhesive strength leading to substrate reinforcement or weak adhesive strength causing tape peeling before division.
Innovation Solution
A method involving a treatment process that maintains strong adhesive strength during initial stages to prevent tape peeling and subsequently reduces adhesive strength to facilitate clean division, including steps like support plate attachment, polishing, weak portion formation, and adhesive strength reduction using UV light or laser modification.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the adhesive strength of the retaining tape is strong, then the substrate is reinforced and prevents tape peeling during treatment, but it becomes difficult to generate cracks and divide the substrate
Solution Approach 1:
The adhesive strength of the retaining tape is made dynamic by changing it at different stages of the process. Initially, the tape has strong adhesive strength to prevent peeling during treatment. After treatment, the adhesive strength is reduced to allow the tape to slide easily during division. This dynamic adjustment resolves the contradiction between maintaining reliable adhesion and enabling easy division.
Solution Approach 2:
The adhesive strength parameter of the retaining tape is changed from high to low at different process stages. By controlling the adhesive strength to be higher during treatment and lower during division, the patent resolves the technical contradiction between reliable tape attachment and easy substrate division.
2Ease of manufacture
If the adhesive strength of the retaining tape is weak, then the substrate can be easily divided, but the retaining tape peels off before the division step
Solution Approach 1:
The adhesive strength is made dynamic rather than static. The retaining tape initially has strong adhesion to prevent peeling during treatment, then the adhesive strength is reduced to allow easy sliding during division. This dynamic control prevents both premature peeling and division difficulties.
Solution Approach 2:
The treatment step is performed as a preliminary action before division, during which the retaining tape maintains strong adhesive strength. After treatment is complete, the adhesive strength is reduced in preparation for the division step, ensuring the tape remains attached during treatment but allows easy division afterward.
3Reliability
If the retaining tape remains strongly adhered throughout the process, then the tape prevents peeling during treatment, but the division process becomes difficult and may result in incomplete division
Solution Approach 1:
The adhesive strength parameter is changed from high to low between the treatment and division steps. During treatment, high adhesive strength ensures tape stability. Before division, the adhesive strength is reduced to allow the tape to slide easily, enabling precise and complete division without compromising treatment reliability.
Solution Approach 2:
The adhesive strength is made dynamically adjustable: strong during treatment to maintain reliability, then weakened before division to enable precise cutting. This dynamic adjustment resolves the contradiction between adhesion stability and division precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise and effective division of semiconductor substrates by ensuring the retaining tape remains adhered during treatment and subsequently slides easily for clean separation, enhancing the cleavage process.
Implementation Method 1
adhesive strength reduction using UV light or laser modification
Implementation Method 2
adhesive strength reduction using UV light or laser modification
Data Source
AI summary
A method for manufacturing a semiconductor device includes: performing a treatment on a semiconductor substrate having a retaining tape adhered to a first surface thereof; and dividing the semiconductor substrate by pressing a dividing member against a second surface of the semiconductor substrate, the second surface being opposite to the first surface to which the retaining tape is adhered. An adhesive strength of the retaining tape relative to the first surface is higher in the performing of the treatment than in the dividing of the semiconductor substrate.


