3D Memory Gate Stack with Zigzag Cutting for Higher Integration
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Solution Overview
Problem
Current semiconductor memory devices face challenges in increasing data storage capacity effectively, particularly in achieving improved product reliability and efficient integration of memory cells.
Innovation Solution
The semiconductor memory device incorporates a cell substrate with a mold structure featuring gate electrodes stacked sequentially, channel structures penetrating the mold, and a cutting structure with alternating line-shaped portions forming a zigzag pattern, which enhances data storage capacity and integration by cutting some gate electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cells are arranged three-dimensionally to increase data storage capacity, then storage capacity is improved, but device complexity increases
Solution Approach 1:
The device is divided into a cell substrate and a mold structure that can be manufactured separately and then bonded together. The mold structure contains multiple gate electrodes that are formed as a stacked configuration, allowing the complex 3D memory cell array to be created through modular assembly rather than monolithic fabrication.
Solution Approach 2:
The invention transitions from traditional planar memory cell arrangement to a three-dimensional configuration by stacking gate electrodes vertically over the cell substrate. This vertical stacking enables increased storage capacity by utilizing the third dimension (height) rather than only expanding in the planar directions.
2Quantity of substance
If a complex mold structure with stacked gate electrodes is used to increase storage capacity, then data storage capacity is improved, but manufacturing precision requirements increase
Solution Approach 1:
The mold structure with stacked gate electrodes is prepared in advance as a separate component before being bonded to the cell substrate. This preliminary formation allows precise control of the gate electrode stacking process independently, and the pre-formed mold structure can be handled and positioned with appropriate precision during the bonding step.
Solution Approach 2:
The mold structure acts as an intermediary component that mediates between the simple cell substrate and the complex stacked gate electrode configuration. By introducing this intermediate mold structure, the manufacturing process can achieve high precision in forming the 3D memory array without requiring the entire device to be fabricated with equivalent precision throughout.
3Productivity
If channel structures are arranged in zigzag pattern to improve integration, then integration efficiency is improved, but device complexity increases
Solution Approach 1:
The channel structures are arranged in a zigzag pattern rather than straight lines, creating a curved or angular path through the mold structure. This zigzag arrangement increases the effective length of channel structures within a given planar footprint, improving integration efficiency by allowing more channels to be packed into the same area while maintaining electrical connectivity.
Data Source
AI summary
A semiconductor memory device may include a cell substrate, a mold structure including gate electrodes stacked on the cell substrate, a channel structures penetrating the mold structure; and a first cutting structure cutting some of the gate electrodes. The first cutting structure may include a first portion having a line shape extending in a first direction and a second portion having a line shape extending in a second direction. The first portion and the second portion may be alternately connected to form a zigzag shape. The first cutting structure may include a first side wall and a second side wall opposing the first side wall. A first point of the first side wall connected from the second portion to the first portion and a second point of the second side wall connected from the first portion to the second portion may be in corresponding channel structures among the channel structures.