Micro LED Display Manufacturing Without Transfer Alignment Defects
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Solution Overview
Problem
The existing methods for manufacturing image display devices using micro LEDs are time-consuming and prone to connection defects, leading to reduced yield and high costs, especially for high-definition displays like 4K and 8K, due to the need for individually transferring and aligning large numbers of micro LEDs onto a substrate with a drive circuit.
Innovation Solution
A method involving the formation of a semiconductor layer with a light-emitting layer on a substrate with a monocrystallized metal seed layer, followed by patterning and etching to create light-emitting elements, which are then covered with insulating films and connected via vias to a drive circuit, allowing for direct formation on the substrate and reducing the transfer process, while using a light-shielding electrode to prevent malfunction and enhance luminous efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If individually-formed micro LEDs are sequentially transferred to a drive circuit substrate, then the display device can achieve high luminance and self-luminous properties, but the manufacturing time becomes extremely long and connection defects increase
Solution Approach 1:
The patent segments the manufacturing process by forming multiple micro LEDs simultaneously on a single semiconductor substrate rather than transferring them individually. This allows batch processing of light-emitting elements, dramatically reducing manufacturing time while maintaining the self-luminous properties of micro LEDs
Solution Approach 2:
The patent combines the formation of multiple micro LEDs into a single integrated process on one substrate. By merging the sequential transfer operations into a simultaneous batch formation process, the manufacturing efficiency is greatly improved while the luminance characteristics are preserved
2Illumination intensity
If individually-formed micro LEDs are sequentially transferred to a drive circuit substrate, then the display device can achieve high luminance, but the yield decreases due to connection defects
Solution Approach 1:
The patent segments the risk of connection defects by eliminating the transfer process entirely. Each micro LED is formed directly in its final position on the substrate, so there are no connection defects from sequential transfer operations, thereby improving yield while maintaining luminance
Solution Approach 2:
The patent extracts and removes the problematic sequential transfer process from the manufacturing flow. By taking out the transfer step that causes connection defects, the yield is improved while the essential luminance function is achieved through direct formation
3Loss of energy
If a light-shielding member is formed between the circuit element and the light-emitting element, then the luminous efficiency is enhanced and malfunction is prevented, but the device complexity increases
Solution Approach 1:
The patent applies local quality by placing light-shielding members only in specific locations where light interference or malfunction could occur, rather than throughout the entire device. This localized approach enhances luminous efficiency and prevents malfunction while minimizing the increase in overall device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the time and number of processes required for manufacturing, increases yield by eliminating alignment issues, and enhances the luminous efficiency of the micro LEDs, making high-definition displays more feasible and cost-effective.
Implementation Method 1
a layer including a first part of a single-crystal metal is formed on a substrate; a semiconductor layer including a light-emitting layer is formed on the first part
Data Source
AI summary
A method for manufacturing an image display device includes: forming, on a substrate, a layer including a first part made of a single-crystal metal; forming a semiconductor layer on the first part, the semiconductor layer including a light-emitting layer; forming a light-emitting element including: a light-emitting surface on the first part, and an upper surface opposite the light-emitting surface; forming a first insulating film that covers the substrate, the layer that comprises the first part, and the light-emitting element; forming a circuit element on the first insulating film; forming a light-shielding member between the circuit element and the light-emitting element; forming a second insulating film covering the first insulating film and the circuit element; forming a first via extending through the first and second insulating films; forming a wiring layer on the second insulating film; removing the substrate; and removing a portion of the first part on the light-emitting surface.