Integrated Hall Sensor Structure With Tunable Channel Sensitivity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional Hall effect sensors face challenges in achieving optimal sensitivity and low temperature drift while accommodating varying resistance and voltage sensitivity requirements across different applications, often necessitating the use of amplifiers that increase device size and complexity.
Innovation Solution
A Hall effect device structure incorporating a well region, channel region, and Hall active region with specific conductivity types and dopant concentrations, along with contact regions, allows for tunable parameters and enhanced sensitivity by adjusting the channel region's width in response to magnetic field changes, eliminating the need for external amplifiers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If amplifiers are included to increase Hall voltage for detection, then measurement precision is improved, but device size increases
Solution Approach 1:
The patent extracts the amplifier function from a separate component and integrates it into the Hall effect device structure itself. The well region and channel region form an embedded amplification mechanism that directly couples with the Hall active region, eliminating the need for external amplifiers while maintaining signal detection capability.
Solution Approach 2:
The patent merges multiple functions into a single integrated structure. The well region, channel region, and Hall active region are combined in a unified device architecture where the channel region serves both as a transport path and an amplification element, reducing overall device size while improving measurement precision.
2Productivity
If device size is reduced for nanometer-scale integration, then productivity is improved, but measurement precision deteriorates
Solution Approach 1:
The patent applies local quality by creating highly doped regions (well region and channel region) with specific conductivity types in localized areas. This enables the channel region to provide field effect control and signal amplification locally at the Hall active region, maintaining measurement precision even as overall device dimensions are reduced for nanometer-scale integration.
Solution Approach 2:
The patent introduces dynamic control capability through the channel region, which can be electrically controlled to modulate the Hall effect response. This dynamic amplification mechanism allows the device to maintain high measurement precision across varying operating conditions while occupying minimal space for high-density integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables highly sensitive magnetic field detection with reduced size and complexity, improving performance across diverse applications by dynamically adjusting the channel region's width in response to magnetic field variations.
Implementation Method 1
Hall effect sensors or devices, which are capable of measuring changes in a magnetic field
Implementation Method 2
a channel region in the substrate, the channel region is over and in direct contact with the well region
Data Source
AI summary
The disclosed subject matter relates generally to semiconductor devices. More particularly, the present disclosure relates to Hall effect devices integrated with junction transistors to achieve tunable parameters within the Hall effect devices. The present disclosure also relates to methods of forming the Hall effect devices.