III-V Silicon Bonding Structure for Outgas-Induced Void Suppression
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Solution Overview
Problem
The generation of voids due to outgas during the thermal bonding of a semiconductor element with a silicon on insulator substrate reduces the bonding strength and can cause the semiconductor element to burst.
Innovation Solution
A semiconductor optical device is manufactured with a substrate having a silicon layer and a semiconductor element featuring a III-V group compound semiconductor layer, incorporating a waveguide and an outgassing countermeasure structure with recessed portions to confine and discharge outgas, thereby suppressing void formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If thermal treatment is performed to bond the semiconductor element to the substrate, then bonding strength is improved, but outgas accumulates at the bonding interface causing voids and reducing bonding strength
Solution Approach 1:
The patent extracts the harmful outgas from the bonding interface by providing dedicated discharge paths (grooves or holes) that lead outgas away from the bonding region. This allows the thermal treatment to proceed for strong bonding while the outgas is continuously removed through the extraction paths, preventing void formation and maintaining bonding quality.
Solution Approach 2:
The patent introduces an intermediary structure (outgas discharge path consisting of grooves and holes) that mediates between the bonding interface and the external environment. This intermediary allows outgas to escape controlled paths rather than accumulating at the bonding interface, enabling simultaneous achievement of strong bonding and outgas management.
2Strength
If thermal treatment temperature is increased to improve bonding, then bonding quality is improved, but outgas generation increases causing voids and potential semiconductor element burst
Solution Approach 1:
The patent converts the harmful effect of outgas generation into a beneficial outcome by designing outgas discharge paths that utilize the outgas pressure itself to drive the outgas through the discharge paths. The thermal treatment that generates outgas is thus transformed into a process that actively removes outgas through the same heating, preventing voids and element burst while achieving strong bonding.
3Strength
If the bonding interface is sealed to maintain bonding strength, then bonding integrity is improved, but outgas has no discharge path causing void formation and element burst
Solution Approach 1:
The patent segments the bonding interface area by providing localized outgas discharge paths (grooves and holes) at specific positions rather than completely sealing the interface. This segmentation allows the bonding interface to remain largely sealed for integrity while creating controlled openings for outgas escape, preventing both void formation and bonding degradation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The outgassing countermeasure structure effectively confines and discharges outgas, enhancing bonding strength and preventing semiconductor element burst, thereby improving yield.
Implementation Method 1
a thermal treatment is performed to bond the semiconductor element. The temperature in the thermal treatment is about several hundred degrees. Moisture and the like are vaporized by the thermal treatment, resulting in the generation of outgas
Data Source
AI summary
A method of manufacturing a semiconductor optical device is a method of manufacturing a semiconductor optical device including a substrate having a silicon layer and a semiconductor element having a III-V group compound semiconductor layer. The silicon layer is provided with a waveguide, a terrace, and an outgassing countermeasure structure, and the outgassing countermeasure structure includes a portion recessed from an upper surface of the silicon layer. The method includes bringing the semiconductor element into contact with the upper surface of the silicon layer by disposing the semiconductor element over the waveguide and the outgassing countermeasure structure, and bonding the semiconductor element to the substrate by performing a thermal treatment after the bringing into contact.