Semiconductor Isolation Structure Layout for Multi-Height Dielectric Regions
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing methods for forming isolation structures on hybrid substrates in MOS fabrication face challenges such as yield losses and inefficiencies in achieving different heights for isolation structures in various regions, leading to higher manufacturing costs and suboptimal dielectric isolation.
Innovation Solution
A method involving separate operations to form isolation structures of different heights in different regions, where a dielectric layer is formed and selectively etched to create base structures and isolation structures, allowing for better control over the height and spacing, thereby enabling greater packing density and improved dielectric isolation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If existing methods are used to form isolation structures on hybrid substrates, then the fabrication process can be completed, but yield losses occur and manufacturing costs increase due to inefficiencies in achieving different heights for isolation structures in various regions
Solution Approach 1:
The patent divides the isolation structure formation into separate operations: first forming a base structure in a first region, then forming isolation structures in a second region. This segmentation allows each region to be optimized independently, improving yield by preventing defects from propagating across the entire substrate and increasing fabrication efficiency through specialized processing steps for each region type.
2Ease of manufacture
If existing methods are used to form isolation structures, then the process can be completed, but manufacturing costs are higher due to inefficiencies in achieving different heights for isolation structures in various regions
Solution Approach 1:
The patent applies local quality by forming a base structure with specific properties in the first region and then forming isolation structures with different height characteristics in the second region. This localized approach allows each region to have the precise structural properties needed for its specific device requirements, reducing manufacturing costs by eliminating the need for expensive rework or yield loss compensation while maintaining high fabrication efficiency through optimized regional processing.
3Reliability
If existing methods are used to form isolation structures, then the fabrication can proceed, but dielectric isolation is suboptimal due to inability to achieve different heights for isolation structures in various regions
Solution Approach 1:
The patent segments the substrate into first and second regions with different isolation structure configurations. The base structure in the first region provides initial isolation, while the subsequently formed isolation structures in the second region achieve enhanced dielectric isolation with different heights. This segmentation enables optimized dielectric isolation for each region's specific electrical performance requirements without requiring overly complex monolithic structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in lower manufacturing costs, enhanced dielectric isolation, and reduced leakage by allowing for precise control over the formation of isolation structures, improving the overall performance of semiconductor devices.
Implementation Method 1
removing portions of the dielectric layer to form a dielectric structure in the first region
Data Source
AI summary
A semiconductor structure and a method for forming a semiconductor structure are provided. The method includes receiving a semiconductor substrate having a first region and a second region; forming a dielectric layer over the semiconductor substrate; removing portions of the dielectric layer to form a dielectric structure in the first region, wherein the dielectric structure includes a base structure and a plurality of first isolation structures over the base structure; forming a semiconductor layer covering the first region and the second region; removing a portion of the semiconductor layer to expose a top surface of the plurality of first isolation structures; and forming a plurality of second isolation structures in the second region.