Array Substrate Recess Insulating Layer Uniformity
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Solution Overview
Problem
The performance of the second thin film transistor in a display panel is affected by the uniformity of the insulating layer of the first thin film transistor, which is formed earlier, leading to poor uniformity and display issues.
Innovation Solution
The array substrate design includes a first thin film transistor with a recess in its insulating layer to accommodate the second thin film transistor, allowing for improved uniformity by forming the second transistor in a recess with a thinner insulating layer, and optionally a buffer layer with a recess, to enhance the surface flatness and uniformity of the insulating layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the first thin film transistor is formed earlier, then the manufacturing process can proceed in sequence, but the uniformity of the insulating layer for the second thin film transistor deteriorates
Solution Approach 1:
The patent applies local quality by creating a recess structure in the insulating layer specifically at the position where the second thin film transistor will be formed. This recess has a different thickness (thinner) compared to the surrounding insulating layer, providing locally optimized conditions for the second transistor's insulating layer formation. This resolves the contradiction by maintaining sequential manufacturing while improving local uniformity where needed.
Solution Approach 2:
The patent introduces a vertical dimension change by forming a recess in the insulating layer. Instead of maintaining a flat, uniform insulating layer across the entire substrate, the recess creates a stepped structure with different thickness zones. This dimensional variation allows the second thin film transistor to be formed in a region with optimized insulating layer thickness, improving uniformity without disrupting the sequential manufacturing process.
2Manufacturing precision
If a recess is formed in the insulating layer for the second thin film transistor, then the uniformity of the insulating layer improves, but the device structure becomes more complex
Solution Approach 1:
The recess structure applies local quality by modifying the insulating layer only in the specific region where the second thin film transistor is formed, while leaving the rest of the insulating layer intact. This localized modification improves uniformity for the second transistor without requiring complex changes to the entire device structure, thus resolving the contradiction between improved uniformity and increased complexity.
Data Source
AI summary
The present disclosure relates to array substrate, preparation method thereof and display panel. An array substrate comprises: a first thin film transistor and a second thin film transistor over a substrate; wherein the first thin film transistor comprises a first portion of a first insulating layer, the first insulating layer comprises a first recess corresponding to the second thin film transistor, and the second thin film transistor is located in the first recess; and wherein a thickness of a second portion of the first insulating layer, which is below the bottom of the first recess, is smaller than that of the first portion of the first insulating layer.