Array Substrate Pixel Structure With Stacked Storage Capacitors
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Solution Overview
Problem
Conventional electronic paper display devices have small pixel structures with limited space for enlarging pixel electrodes and common electrodes, leading to small storage capacitors and increased stray capacitances, which exacerbate pixel current leakage and hinder display performance.
Innovation Solution
The array substrate incorporates a pixel structure with three storage capacitors formed by a specific sequence of metal layers and a thin film layer, increasing total storage capacitance without altering the pixel structure's space or introducing stray capacitances, achieved by rearranging the manufacturing sequence of the third metal layer and the second planarization layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If pixel electrodes and common electrodes are enlarged to increase storage capacitor capacitance, then capacitance increases, but pixel structure space is exceeded and stray capacitances increase
Solution Approach 1:
The storage capacitor is divided into three separate capacitors (first storage capacitor between first and second metal layers, second storage capacitor between second metal layer and third metal layer, third storage capacitor between third metal layer and thin film layer) instead of one large capacitor. This segmentation allows the total capacitance to be distributed across multiple smaller units within the same pixel structure space, avoiding the need to enlarge the overall pixel area while still achieving increased total capacitance.
Solution Approach 2:
The patent utilizes the vertical dimension by stacking multiple metal layers (first metal layer, second metal layer, third metal layer) and the thin film layer at different heights to form three storage capacitors in series. This vertical stacking approach increases the effective capacitance without expanding the horizontal pixel area, effectively transitioning from a two-dimensional to a three-dimensional structure to resolve the space constraint.
2Quantity of substance
If pixel electrodes and common electrodes are enlarged to increase storage capacitor capacitance, then capacitance increases, but stray capacitances increase
Solution Approach 1:
By segmenting the storage capacitor into three separate capacitors formed between different layer pairs, the patent reduces the overlap area between any two adjacent electrodes. This segmentation strategy increases the total storage capacitance through vertical stacking while minimizing the horizontal overlap that would generate stray capacitances, thereby resolving the contradiction between increasing capacitance and reducing stray capacitance.
3Productivity
If pixel structure space is maintained small for high pixel density, then pixel density increases, but storage capacitor capacitance decreases
Solution Approach 1:
The patent resolves the contradiction between high pixel density and sufficient capacitance by transitioning to a three-dimensional vertical stacking structure. Multiple metal layers and the thin film layer are arranged vertically to form three storage capacitors within each pixel, enabling high pixel density on the substrate while maintaining adequate total capacitance through the vertical dimension.
Solution Approach 2:
The patent implements a nested structure where multiple storage capacitors are contained within a single pixel structure. The first storage capacitor, second storage capacitor, and third storage capacitor are nested vertically within the same horizontal footprint, allowing high pixel density while maintaining sufficient total capacitance through the nested arrangement of multiple capacitor units.
Data Source
AI summary
The present application provides an array substrate, a manufacturing method of the array substrate, and an electronic paper display device. The array substrate includes a pixel structure. The pixel structure includes a first metal layer, a second metal layer, a third metal layer, and a thin film layer that are sequentially arranged at intervals. The first metal layer and the second metal layer form a first storage capacitor, the second metal layer and the third metal layer form a second storage capacitor, and the third metal layer and the thin film layer form a third storage capacitor. A capacitance of a storage capacitor is increased.