Asynchronous Voltage Generation for Semiconductor Noise Reduction
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Solution Overview
Problem
Conventional semiconductor devices experience a peak level drop in external voltage due to simultaneous use for generating internal voltages, leading to noise and potential malfunction.
Innovation Solution
The semiconductor device employs asynchronous internal voltage generating circuits that share an external voltage and generate internal voltages at different levels, compensating for level drops at distinct points to maintain target levels, thereby minimizing external voltage noise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple internal voltage generating circuits simultaneously use the external voltage to generate internal voltages, then the internal voltages can be generated efficiently, but the external voltage experiences peak level drop causing noise and potential malfunction
Solution Approach 1:
The patent divides the simultaneous voltage generation operation into segmented time slots. Different internal voltage generating circuits operate at different time points rather than simultaneously, which segments the current draw from the external voltage source and prevents peak level drop that causes noise and malfunction.
2Reliability
If the detecting unit detects the pumping voltage level drop and activates pumping operation, then the pumping voltage level can be restored, but the external voltage is consumed during pumping which takes longer than the detection period
Solution Approach 1:
The patent applies preliminary action by pre-charging capacitors during periods when pumping is not needed. When voltage drop is detected, the stored charge in capacitors is immediately used to restore the pumping voltage level, avoiding the time delay associated with pumping operations and reducing the time the external voltage is consumed.
3Productivity
If the core voltage is supplied to bit lines after charge sharing, then data transfer can proceed, but the external voltage level drops due to simultaneous pumping and driving operations
Solution Approach 1:
The patent implements periodic action by alternating between pumping operations and driving operations at different time periods. During charge sharing and data transfer periods, the system switches to driving mode rather than simultaneous pumping and driving, which reduces external voltage consumption while maintaining data transfer productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the peak level drop of external voltage and prevents noise-related malfunctions by generating internal voltages using the external voltage at different points, ensuring stable operation.
Implementation Method 1
a detecting unit 24 which compares and detects a potential difference between the pumping voltage VPP fed back to the detecting unit 24 and a reference voltage VREF2
Implementation Method 2
a pumping unit 26 which generates the pumping voltage VPP by pumping the external voltage VEXT
Implementation Method 3
a driving unit 16 which generates the core voltage VCORE by driving an external voltage VEXT
Data Source
AI summary
The present invention describes a semiconductor device that generates internal voltages having different levels using an external voltage. The semiconductor device includes a plurality of asynchronous internal voltage generating circuits that share an external voltage source and generate internal voltages having different levels from one another. The plurality of asynchronous internal voltage generating circuits maintain the levels of the internal voltages at target levels by using the external voltage at different time points, respectively. The semiconductor device minimizes noise in the external voltage according to the use of the internal voltages.