AuGeNi Wiring Layer for Light Emitting Device Heat Dissipation
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Solution Overview
Problem
Existing light emitting devices with semiconductor elements face challenges in heat dissipation, leading to potential degradation in element characteristics and service life due to self-heating, especially as integration levels increase.
Innovation Solution
Incorporating an AuGeNi layer in the wiring, allowing semiconductor light emitting elements to be bonded directly to its surface with intermolecular force, which suppresses surface roughness and enhances heat dissipation by preventing hillocks and voids formation during high-temperature treatments.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor light emitting elements are integrated at higher levels, then device functionality and output are improved, but heat dissipation capability deteriorates leading to self-heating and degradation in element characteristics and service life
Solution Approach 1:
The patent changes the material parameter of the wiring from conventional metals to AuGeNi alloy, which has specific thermal and surface properties that improve heat dissipation and maintain surface smoothness during bonding, thereby resolving the heat dissipation deterioration issue while maintaining device functionality
Solution Approach 2:
The patent uses AuGeNi composite material for the wiring layer, combining gold with germanium and nickel to create a material that provides both excellent electrical conductivity for device functionality and superior thermal conductivity with surface-stabilizing properties for improved heat dissipation
2Ease of manufacture
If conventional metal wirings are used, then manufacturing is simple, but surface roughness increases during high-temperature treatments forming hillocks and voids that worsen bonding quality
Solution Approach 1:
The patent changes the material composition parameter to AuGeNi alloy, which has a eutectic structure that prevents hillock formation during reflow processes, thereby maintaining surface smoothness and bonding quality without complicating the manufacturing process
Solution Approach 2:
The AuGeNi layer serves as a sacrificial or temporary structure during manufacturing that prevents surface degradation, allowing conventional simple manufacturing processes to be used while achieving high surface precision through the material's inherent properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of AuGeNi layers improves heat dissipation performance, maintaining element characteristics and extending service life by ensuring stable bonding and reducing the impact of self-heating in integrated semiconductor light emitting devices.
Implementation Method 1
Incorporating an AuGeNi layer in the wiring, allowing semiconductor light emitting elements to be bonded directly to its surface with intermolecular force, which suppresses surface roughness and enhances heat dissipation by preventing hillocks and voids formation during high-temperature treatments
Implementation Method 2
semiconductor light emitting element bonded to the surface of the AuGeNi layer with the aid of intermolecular force
Implementation Method 3
there has been a demand for improved heat dissipation from the semiconductor light emitting elements
Data Source
AI summary
A light emitting device includes: a wiring including an AuGeNi layer; and a semiconductor light emitting element bonded to the surface of the AuGeNi layer with the aid of intermolecular force, and electrically connected to the wiring.