Semiconductor/Solid-State Device Details TRIZ Cases

Back-surface ground pattern notches create leak paths for evaporated moisture in electronic device wiring boards.

A common word line extends across adjacent cell regions to enable efficient metal interconnections.

A protective film resists etching on an insulating layer within a solid-state imaging device to maintain structural integrity.

A eutectic alloy layer reflows between wafer bond rings to form a hermetic seal without requiring oxide removal from the bonding interface.

Dielectric spacer liners protect contact hole sidewalls during silicidation, preventing encroachment and maintaining critical dimension precision.

A multi-size filler blend in an epoxy insulating member raises thermal conductivity to 4-15 W/m·K while maintaining breakdown strength above 5 kV.

Selective plastic encapsulation on a graphene substrate reduces device complexity and size while maintaining high detection sensitivity for gases.

A semiconductor inductor embeds concatenated coils within passivation layers using a metal oxide etch stop to form a compact structure.

Vertical stacking of electrode and dielectric layers increases integration density while reducing manufacturing costs associated with fine pattern formation.

Stepwise stacked semiconductor chips use edge bonding pads to reduce package size while maintaining electrical connectivity.

Microwave-excited plasma treatment forms an intermediate compound layer on electroless copper-plated films to enhance adhesiveness.

Vertical metal interposers separate IC dies in a system-in-package, conducting thermal energy to mitigate local heating.

Varying through-substrate via sizes in interposers reduce manufacturing cycle time and power consumption while enhancing integration density.

A microelectronic structure uses a substrate-mounted bridge component to establish vertical electrical pathways between package layers.

A three-dimensional memory device uses stepped connection plates to electrically connect discrete conductive layers across array regions.

A nonconductive film applies lateral support to solder balls during reflow.

A package-on-package system uses a heat spreader base to conduct thermal energy away from integrated circuits.

Dummy patterns prevent incomplete etching of interlayer dielectrics by acting as depth references, resolving connectivity issues in image sensor fabrication.

A dual-layer dielectric structure combines organic and inorganic materials to fill gaps between memory wordlines.

Curved elongated bumps and dummy structures reduce corner stress concentrations to prevent solder ball cracking in surface mount assemblies.

A segmented plating process forms a second electrode around an opening to enable precise mask placement for subsequent layers.

A wafer level interconnect structure forms on a sacrificial substrate to enable high temperature processing for semiconductor die mounting.

A package-on-package interconnect structure uses through vias to stack semiconductor dies within a molding compound.

A light transmissive substrate with wavelength conversion regions bonds to semiconductor structures for precise color compensation.

A bowl shaped pad with non-uniform thickness increases solder contact area.

Conductive clips replace wirebonds to lower electrical resistance and increase current carrying capacity in high power semiconductor packages.

A semiconductor device with a stepped structure featuring alternately stacked interlayer dielectric and conductive layers, where a barrier layer is formed on the sidewalls of the conductive layers.

An adhesive layer bonds facing pads on multilayer wiring boards to enable reliable electrical connections without soldering.

Laser ablation patterns polymer layers to form seed layers, eliminating photo resist steps and reducing fabrication cost.

Vertical stacking of die pads reduces thermal resistance without increasing device size, resolving the trade-off between heat radiation and compactness.

Transverse conductive clips connect to upper die terminals, providing low resistance electrical paths within a compact encapsulated structure.

Gradient copper area ratios in upper and lower interconnect layers absorb wire bonding loads, preventing low-k film cracks during probing.

A vapor-deposited carbon sealant coats semiconductor chips and carriers to form a protective barrier against environmental degradation.

Segmented seal rings with a concave protective layer spacer minimize chip area while preventing dicing cracks and etching damage.

Selective etching of a metal plate main body creates an electrode terminal with a curved skirting part that distributes stress and suppresses resin cracking.

Optimizing CVD temperature between 100 and 400 degrees Celsius improves step coverage and adhesivity while reducing copper wiring resistance.

A nonvolatile memory element integrates a series diode with an asymmetric resistance variable layer to supply stable current.

A leadframe pocket houses a thermally-split assembly to minimize wire bonding length in optical transceivers.

Spacer-assisted litho-etch patterning defines precise metal cuts, reducing edge roughness and parasitic capacitance in semiconductor devices.

A pass-through interconnect structure extends through substrate pads to electrically couple stacked microelectronic dies.

Segmented body-tied FET structures isolate specific current density components to eliminate exaggerated estimates and enable accurate hysteresis prediction.

Pre-forming connectors on the first sub-package before mounting the second eliminates damage risks during assembly, improving yield and reliability.

Stacking word lines and interconnections vertically reduces chip area while managing wiring complexity.

Single patterning forms recesses in the passivation layer, increasing sealant contact area to block moisture and oxygen ingress.

Replacing silicon interposers with packaging frames containing conductive columns reduces thermal expansion mismatch while maintaining electrical connectivity.

Curved slots on the conductive frame increase bonding area, blocking mist permeation while maintaining sealing performance.

Segmented through-silicon via arrays minimize IR drops across chip layers, reducing power consumption and improving voltage stability.

A semiconductor contact structure uses a dual-metal design to lower resistivity and reduce signal delay.

Connecting a dummy insulating part to the lead frame prevents ceramic board swinging and lead deformation during plating.

A plating solution circulation line with temperature control and filtration manages metal concentration in electroless plating.

A radiation-sensitive thyristor shorts power supply terminals upon irradiation to protect integrated circuits.

Placing bit lines under the memory stack relaxes pitch constraints and eliminates deep contacts, reducing signal interference in high-density arrays.

Annealing a manganese seed layer drives diffusion to form a barrier between the dielectric and metal liner.

A semiconductor packaging arrangement spaces source electrodes from die pads using conductive members to ensure electrical coupling and mechanical integrity.

A low-durometer resin layer fills surface irregularities on ceramic substrates to establish direct thermal contact with pressing members.

A semiconductor adapter board uses a protective groove on copper pillars to prevent diffusion into the silicon substrate.

A recessed barrier film sidewall enables self-aligned via formation on lower conductors.

An insulating layer with a pre-formed opening guides rear-side etching to create self-aligned through-silicon vias in semiconductor substrates.

Shared reference planes reduce return path count while controlled impedance distribution allows reflections to settle within symbol time for high bandwidth.

Selective solder wettability enables automatic alignment of sub-90 μm components, resolving gripping limitations in micro-assembly.

Porous silicon layer transfer reduces lattice damage and thermal stress while improving heat removal efficiency in 3D integrated circuits.

A semiconductor ground shield structure uses coaxial conductive wirings and a radial metal wire to reduce coupling capacitance.

Stud bumps act as local heat sinks to suppress peak temperature rise in high power silicon dies without adding thick copper layers.

Angled substrate recesses guide chiplets into precise positions, eliminating flux residue and misalignment issues inherent in traditional solder-based stacking.

AuGeNi wiring layer bonds semiconductor light emitting elements via intermolecular force to stabilize surface finish and enhance thermal conduction.

Vertical stacking of multiple chips on a reusable carrier frame eliminates complex leadframes, reducing package footprint while maintaining high I/O capability.

Flexible circuits connect stacked ball grid array packages in a 3D module, enabling high-frequency chip operation while maintaining mechanical stability.

A vertical IGBT uses sintered metal bonding layers to attach a heat-release member fitted into a bus bar through-hole.

FinFET structure with shallow trench insulation confines antifuse rupture to minimize current leakage in one-time programmable memory cells.

A reflector trough with a segmented circumferential surface focuses radiation from an optoelectronic semiconductor chip into a spatially narrow pattern.

Segmented passivation grooves intercept bonding metal overflow between light-emitting elements, preventing electrical shorts and defects.

Copper paste posts buffer wire bonding stress to prevent die peeling and improve production yield.

Segmented pump housing allows independent motor module replacement, resolving the trade-off between structural simplicity and component adaptability.

A semiconductor package uses a segmented under-bump metallurgy layer with an adhesive interface to improve structural integrity.

A mask-programmable interconnect redistributes heterogeneous power supplies through through-die vias to vertically stacked semiconductor die.

Jet ablation removes overhanging passivation material from etched semiconductor substrates, eliminating die chipping and cracking caused by mechanical sawing.

A semiconductor device uses dummy electrodes with specific surface area ratios to manage bonding loads.

A printed wiring board embeds recessed conductor pads in a resin insulating layer to maintain flatness.

Block and dummy patterns guide spacer deposition to create narrow trenches, overcoming immersion lithography resolution limits.

Ion implantation into amorphous silicon filler material prevents microbubble formation during annealing, increasing breakdown voltage and long-term reliability.

A thermal interface material incorporates iron-based inorganic or organic pigments to provide distinguishable coloration.

Shielding member hooks onto substrate to reduce electromagnetic interference without adding separate mounting components.

Staircase mounting structures compensate for die thickness variability in 3D stacks, enabling scalable two-dimensional optical arrays with low signal loss.

A chip package uses a protection cap and adhesive layers to shield the sensing area.

Conductive vias link the shielding layer to through silicon vias, eliminating dedicated ground connections and reducing manufacturing costs.

Silicon nanowire clusters embedded in silicon substrates dissipate heat from internal hot spots, eliminating bulky external power supplies.

Segmented leadframes distribute lands across the package bottom to increase I/O capacity without enlarging device dimensions.

Segmented micro-heaters in a film structure heat solder balls to improve manufacturing efficiency and reduce costs.

Through-silicon via circuits with steering logic enable flexible data signal routing between integrated circuit dice.

A vapor chamber uses a ductile plate region to seal etched channels under pressure.

Local gate overlap and protruding source contacts increase turn-on current while maintaining low resistance in the source select line.

Opposing interconnection wires from parallel pads shorten backend paths, reducing power consumption and improving signal integrity.

A semiconductor power device package uses a leadframe and insulation multilayer stack for electrical isolation.

A semiconductor device package features a redistribution layer with controlled side wall surface roughness to expose the working area.

Parallel trenches reach the substrate to spatially separate compound semiconductor layers and enable uniform photoresist formation.

A current sensor integrated circuit uses polyimide film insulation to enclose semiconductor dies and primary conductors within a lead frame package.

Open back junction box uses integral threaded ground screw receptacle to simplify wiring access at construction sites.

Segmented teeth reduce thermal conduction from thick copper, preventing premature solidification of lead-free tin and ensuring reliable current conduction.

A Bi-rich Sn-Bi alloy interlayer enables transient liquid phase bonding between copper substrates.

Segmenting the memory die interface reduces fabrication complexity by connecting each processing die to specific interface groups.

Metal banks and insulating layers in scribe regions prevent grinding fluid contamination and reduce dicing blade damage during semiconductor wafer thinning.

A semiconductor power device uses two poly-silicon layers to form a shielded gate structure and an ESD clamp diode.

A metal base circuit board uses optimized linear expansion coefficients across insulating and conductive layers to manage thermal stress.

A compensation part undergoes deformation to absorb thermal expansion differences between the packaging component and semiconductor element.

A compact integrated circuit inductor embeds a magnetic core within the package using offset metallic lead windings for efficient energy storage.

A back-to-back stacked semiconductor package structure uses a common conductive layer to orient dies in opposite directions for independent circuit routing.

Dicing saws trim mold compound from packaged dies to achieve varying thicknesses without additional equipment or process steps.

A vertical memory device divides channel holes into subchannels to increase storage density without expanding the footprint.

Varying vertical spacing between differential bond wires minimizes signal leakage and enhances common mode immunity in high-frequency transmission.

A mechanical element within an integrated circuit package provides robust fixation and precise centering for sensitive components.

Vertical heat spreader extensions reduce lateral footprint while preventing harmful heat transfer to upper packages.

Sealing liquid phase thermal interface material inside a perimeter-bounded chamber eliminates solid TIM cracking while achieving high thermal conductivity.

Conductive paste creates percolation paths between a convex pillar and pad, reducing thermal stress from differing expansion coefficients.

Oxygen plasma treatment creates a non-conductive, hole-transporting oxidized layer on an OLED anode surface.

A chip package integrates a dielectric layer with lateral grooves housing conductive layers to enable direct electrical connections.

A semiconductor package structure uses stacked conductive features and bumps to increase input output connection density.

Segmented lead members dissipate heat to radiators while reducing insulating substrate area and manufacturing costs.

A semiconductor package design system generates layouts for 2.5D interposers and extracts electrical properties from vertically stacked dies.

Melted underfill resin subjected to fluid pressure prevents void formation in flip-chip packages, maintaining adhesiveness and thermal conductivity.

Merging chips through a dicing area reduces wiring substrate size while eliminating warpage caused by inter-chip gaps.

A metal crack stop with a sidewall recess traps delamination cracks at the barrier film and interlayer dielectric interface.

Variable conductive line widths compensate for stiffener proximity, reducing crosstalk and eliminating extra shielding layers.

SiGe sacrificial layer enables epitaxial-based 3D semiconductor device stacking.

Asymmetric connecting element prevents falling on small control electrodes, ensuring stable electrical connection between semiconductor package components.

Anti-oxidation structures on redistribution layers prevent terminal oxidation, keeping contact resistance low for fast signal transmission.

Dielectric spacer assemblies prevent electrical shorts between contact vias and source layers, enhancing device reliability.

A dual damascene structure uses a reinforcement layer with voids to lower capacitance in semiconductor interconnects.

A flip chip package process uses a stencil with an air slot hole to evacuate trapped air during liquid compound dispensing.

A strip-shaped redistribution layer with peaks and valleys enhances adhesion on dielectric sidewalls.

I-shaped stiffening ring reduces warpage and stress on semiconductor die while increasing passive component mounting surface area.

A patterned insulating layer exposes a pad opening for an under bump metal layer that bonds to the conductive bump.

Lateral offset geometry lengthens metal atom diffusion paths, preventing reliability degradation in sensors operating above 600°C.

A power semiconductor module extends a lead frame paddle to expose the source electrode for external thermal conduction.

A hybrid silicon carbide device structure bonds a switching device to a substrate with multiple conductivity layers.

Conformal conductive coatings shield RF devices from electromagnetic interference while maintaining low-profile designs.

A heat radiator uses an attachment member with increased height to secure fins closer to the substrate.

A stiffener mounted over a package carrier provides planar rigidity to mitigate warpage in stackable integrated circuit packages.

Bump electrodes on a mesa structure distribute current to prevent crowding and reduce forward voltage in flip-chip UV devices.

Raised vias bridge terminal height gaps to reduce manufacturing costs and complexity.

Bi-phase fluid circuit transfers heat through capillary action, resolving excessive thermal buildup in compact microelectronic devices.

Multilayer wiring ground lines shield redistribution pads from electric field noise.