Silicon Nanowire Clusters for 3D IC Thermal Management
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Solution Overview
Problem
3D stacked ICs face significant heat dissipation challenges due to hot spots, leading to thermal stress and reliability issues, as traditional thermoelectric elements are ineffective in cooling interior high-temperature areas and require separate power supplies, making them bulky and inefficient.
Innovation Solution
A semiconductor device with silicon nanowire clusters directly integrated into the silicon substrate, connected by circuit layers, which utilize thermoelectric effects to dissipate heat efficiently, eliminating the need for external power supplies and allowing for effective cooling of internal hot spots within the 3D stacked ICs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional thermoelectric elements are used for heat dissipation, then cooling capability is provided, but volume is large and separate power supply is required
Solution Approach 1:
The thermoelectric element is segmented into multiple independent thermoelectric conversion units, each capable of functioning autonomously. This segmentation allows the system to achieve effective heat dissipation while reducing the overall volume required compared to traditional single-unit thermoelectric elements.
Solution Approach 2:
The patent combines the power supply function and thermoelectric conversion function into a single integrated structure. The power supply electrode and thermoelectric conversion unit share common components, eliminating the need for separate power supply circuits and reducing overall device volume.
2Temperature
If traditional thermoelectric elements are attached to outside of 3D stacked IC, then cooling function is provided, but interior high temperature area cannot be effectively cooled
Solution Approach 1:
The thermoelectric conversion units are nested within the 3D stacked IC structure, with each unit positioned to target specific high-temperature regions. This nested configuration allows direct cooling of interior hot spots without requiring external attachment, while maintaining integration within the existing device architecture.
Solution Approach 2:
Different thermoelectric conversion units are positioned at different locations within the 3D stacked IC to address local high-temperature areas. Each unit is optimized for its specific position, providing targeted cooling where needed most while maintaining overall device functionality.
3Use of energy by moving object
If thermoelectric elements require separate power supply circuit, then power can be supplied, but device complexity increases
Solution Approach 1:
The power supply electrode serves dual functions: as an electrical connection for power supply and as a structural component of the thermoelectric conversion unit. This merging eliminates separate power supply circuits and reduces device complexity while maintaining full power supply capability.
Solution Approach 2:
The power supply electrode is designed to perform multiple functions simultaneously: providing electrical power, serving as a thermal management component, and acting as a structural support element. This multi-functionality reduces the number of separate components needed and simplifies the overall device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integration of silicon nanowire clusters within the substrate enhances heat dissipation efficiency, reduces thermal resistance, and increases the reliability of 3D stacked ICs by providing a compact, efficient thermoelectric cooling mechanism that can be powered through existing signal transmission paths, addressing the limitations of traditional heat dissipation methods.
Implementation Method 1
silicon nanowire clusters... which utilize thermoelectric effects to dissipate heat efficiently
Data Source
AI summary
A semiconductor device including a silicon substrate, a plurality of silicon nanowire clusters, a first circuit layer and a second circuit layer. The silicon substrate has a first surface, a second surface opposite to the first surface and a plurality of through holes. The silicon nanowire clusters are disposed in the through holes of the silicon substrate, respectively. The first circuit layer is disposed on the first surface and connected to the silicon nanowire clusters. The second circuit layer is disposed on the second surface and connected to the silicon nanowire clusters.