Semiconductor Memory Pad Redirection for Wire Length Reduction
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Solution Overview
Problem
The increasing length of backend interconnection wires in semiconductor memory leads to higher power consumption and reduced signal integrity, necessitating a reduction in wire length to improve performance.
Innovation Solution
The semiconductor memory design incorporates first and second pads arranged in parallel directions with interconnection wires extending in opposite directions, forming a redistribution layer that reduces the overall length of interconnection wires, thereby minimizing power consumption and enhancing signal integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the backend interconnection wires are extended to connect inner pads to outer pads, then the pads can be redistributed to appropriate positions, but the wire length increases leading to higher power consumption and reduced signal integrity
Solution Approach 1:
The patent introduces a third dimension (vertical stacking) to the traditional planar pad arrangement. By forming upper and lower pads at different vertical levels and connecting them through vertical interconnection wires, the design redistributes pads in three-dimensional space rather than extending wires horizontally across the backend, thus reducing wire length while maintaining redistribution capability
Solution Approach 2:
The pad arrangement is segmented into multiple groups (upper pads and lower pads) positioned at different vertical levels. This segmentation allows independent optimization of wire connections for each group, enabling shorter interconnection paths compared to a single-layer arrangement where all pads would require long horizontal connections
2Adaptability or versatility
If the backend interconnection wires are extended to connect inner pads to outer pads, then the pads can be redistributed to appropriate positions, but the signal integrity is reduced due to longer wire length
Solution Approach 1:
The patent introduces a third dimension (vertical stacking) to the traditional planar pad arrangement. By forming upper and lower pads at different vertical levels and connecting them through vertical interconnection wires, the design redistributes pads in three-dimensional space rather than extending wires horizontally across the backend, thus reducing wire length while maintaining redistribution capability
Solution Approach 2:
The pad arrangement is segmented into multiple groups (upper pads and lower pads) positioned at different vertical levels. This segmentation allows independent optimization of wire connections for each group, enabling shorter interconnection paths compared to a single-layer arrangement where all pads would require long horizontal connections
3Device complexity
If pads are arranged in a single layer, then the structure is simple, but the interconnection wire length increases
Solution Approach 1:
The patent transitions from a two-dimensional single-layer pad arrangement to a three-dimensional multi-layer structure. By utilizing vertical stacking with upper and lower pads at different heights, the design achieves shorter interconnection paths without significantly increasing structural complexity, as the multi-layer approach follows standard semiconductor fabrication techniques
Data Source
AI summary
A semiconductor memory includes a plurality of first pads arranged in a first direction, a plurality of second pads arranged parallel to the plurality of first pads and in the first direction, a plurality of third pads arranged in a second direction perpendicular to the first direction, and a plurality of fourth pads arranged in the second direction. The semiconductor memory further includes first interconnection wires extending from the plurality of first pads in the second direction, the first interconnection wires being connected to the plurality of third pads, and second interconnection wires extending from the plurality of second pads in an opposite direction to the second direction, the second interconnection wires being connected to the plurality of fourth pads.


