Semiconductor Package Structure for High-Density I/O Connections
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Solution Overview
Problem
The semiconductor industry faces challenges in manufacturing new packaging technologies for semiconductor devices, particularly in reducing feature size, increasing integration density, and minimizing fabrication costs and time, while maintaining the quality and performance of semiconductor devices.
Innovation Solution
The approach involves forming conductive features and bumps over conductive traces on a semiconductor substrate without a wider or protruded region to serve as a pad, which increases the density of conductive paths and reduces spacing between neighboring traces and bumps, allowing for more efficient packaging with reduced thickness and cost.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional packaging technologies are used, then manufacturing process is simpler, but integration density and number of I/O connections are limited
Solution Approach 1:
The patent transitions from traditional planar packaging to three-dimensional stacked packaging architecture. Multiple semiconductor dies are vertically stacked and interconnected through through-silicon vias (TSVs), enabling significant increase in I/O connections and integration density by utilizing the vertical dimension rather than only horizontal expansion.
Solution Approach 2:
The patent implements nested packaging structures where smaller semiconductor dies are embedded within larger substrate structures. Multiple functional layers including interconnect layers, dielectric layers, and conductive vias are nested within each other vertically, allowing high-density integration of numerous I/O connections in a compact package volume.
2Quantity of substance
If feature size is reduced to increase integration density, then more components can be integrated, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs advanced deposition and etching process parameters to achieve precise control of TSV dimensions and interconnect features at reduced sizes. By optimizing parameters such as plasma power, gas flow rates, and deposition temperatures, the manufacturing process maintains high precision even as feature sizes are scaled down to increase integration density.
3Volume of moving object
If package size is reduced, then smaller package structures are achieved, but manufacturing challenges increase
Solution Approach 1:
The patent divides the semiconductor device into multiple separate dies that are individually manufactured and then stacked vertically. This segmentation allows each die to be optimized independently and simplifies the packaging process by enabling parallel manufacturing of multiple dies, which can then be assembled into a compact stacked package structure.
Data Source
AI summary
A semiconductor device structure and a manufacturing method are provided. The semiconductor device structure includes a semiconductor substrate and a dielectric layer over the semiconductor substrate. The semiconductor device structure also includes a conductive trace over the dielectric layer. The semiconductor device structure further includes a conductive feature over the conductive trace, and a width of the conductive feature is substantially equal to or larger than a maximum width of the conductive trace. In addition, the semiconductor device structure includes a conductive bump over the conductive feature.