Strip-Shaped Redistribution Layer for Via Adhesion

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Solution Overview

Problem

As semiconductor integrated circuits continue to scale down, forming reliable vias becomes increasingly difficult due to thin metal deposition on interlayer dielectric layers, limiting device density and manufacturing complexity.

Innovation Solution

An electronic device with a redistribution layer featuring a strip-shaped portion that includes multiple steps with peaks and valleys, which tapers towards the contact pad, enhancing adhesion on dielectric layer sidewalls and improving via reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional planar redistribution layers are used, then manufacturing process is simple, but adhesion on dielectric layer sidewalls is insufficient leading to via reliability issues

Engineering Contradiction:
Improvevia reliabilityVSAvoidredistribution layer structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The redistribution layer transitions from a conventional planar (2D) structure to a three-dimensional structure with strip-shaped steps featuring peaks and valleys. This dimensional change creates additional surface area and contact points on the dielectric layer sidewalls, significantly enhancing adhesion and via reliability without complicating the manufacturing process

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The strip-shaped steps incorporate curved surfaces with peaks and valleys rather than flat planar surfaces. These curved geometries increase the surface area contact with the dielectric layer sidewalls, improving mechanical interlocking and adhesion strength, which directly enhances via reliability

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Quantity of substance

If minimum feature size is reduced to increase integration density, then more components can be integrated, but via formation becomes increasingly difficult

Engineering Contradiction:
Improveintegration densityVSAvoidvia formation difficulty
Core Design Contradiction:
Quantity of substanceVSEase of manufacture

Solution Approach 1:

By transitioning to a 3D redistribution layer structure with vertical steps, the design achieves higher integration density in the vertical dimension rather than continuing to scale down horizontal feature sizes. This approach maintains manufacturability while increasing component density

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The invention changes the geometric parameters of the redistribution layer from planar to three-dimensional with specific step heights and peak-valley dimensions. This parameter change enables better metal deposition on sidewalls and improves via formation reliability without requiring further reduction of minimum feature sizes

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS10818625B1Electronic device
Publication Date: 2020.10.27 NAN YA TECH
  • US10818625B1 patent drawing
  • US10818625B1 patent drawing

AI summary

An electronic device is provided. The electronic device includes a substrate, at least one contact pad disposed on the substrate, and a redistribution layer including a strip-shaped portion. The redistribution layer is electrically connected to the contact pad. The strip-shaped portion includes at least two strip-shaped steps, and each of the strip-shaped steps includes a plurality of peaks and valleys.