Semiconductor Package UBM Layer Adhesion and Crack Resistance

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current semiconductor packages face challenges in achieving stable electrical connections and reliability due to limitations in the under-bump metallurgy (UBM) layer design, which affects the adhesion and crack propagation between the UBM layer and connection bumps.

Innovation Solution

The semiconductor package incorporates a UBM layer with a UBM pad and via structure, where the UBM pad has a specific diameter and thickness, and the UBM via penetrates the insulating layer, accompanied by an adhesive layer, to enhance adhesion and reliability, and the UBM layer is formed using a copper foil layer with a different crystal structure than the redistribution layer, facilitating improved connectivity and manufacturing efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the UBM layer uses a conventional design with limited adhesion enhancement, then the manufacturing process is simpler, but the reliability and adhesion between UBM layer and insulating layer deteriorate

Engineering Contradiction:
Improveadhesion between UBM layer and insulating layerVSAvoidUBM layer structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The UBM layer is segmented into multiple functional components: UBM pad, UBM via, and adhesive layer. This segmentation allows each component to be optimized independently for its specific function, improving overall adhesion and reliability without requiring complex integration

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The adhesive layer is applied in advance between the UBM pad and insulating layer before final assembly. This preliminary action ensures optimal adhesion from the outset, preventing future failures without requiring complex post-processing steps

Inventive Principle:
Principle #10Preliminary action

2Reliability

If the UBM via has the same diameter as the UBM pad, then the manufacturing process is simpler, but the adhesion and crack propagation resistance deteriorate

Engineering Contradiction:
Improvecrack propagation resistanceVSAvoidvia and pad diameter control
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The UBM via is designed with a smaller diameter than the UBM pad, creating a localized quality difference. This configuration concentrates stress distribution in a specific pattern that enhances crack propagation resistance while maintaining manufacturability through standard patterning processes

Inventive Principle:
Principle #3Local quality

3Reliability

If the UBM pad upper surface is higher than the insulating layer lower surface, then the connection bump attachment is easier, but the adhesion between UBM layer and insulating layer deteriorates

Engineering Contradiction:
Improveadhesion between UBM layer and insulating layerVSAvoidconnection bump attachment
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

The adhesive layer is applied in advance to bridge the UBM pad and insulating layer, ensuring optimal adhesion before connection bumps are attached. This preliminary bonding action maintains reliability while allowing flexible connection bump placement

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The adhesive layer acts as an intermediary between the UBM pad and insulating layer, providing a bonding interface that maintains strong adhesion while accommodating variations in UBM pad height relative to the insulating layer

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS20230060618A1Semiconductor package and method of manufacturing the same
Publication Date: 2023.03.02 SAMSUNG ELECTRONICS CO LTD
  • US20230060618A1 patent drawing
  • US20230060618A1 patent drawing
  • US20230060618A1 patent drawing

AI summary

A semiconductor package includes a redistribution portion including an insulating layer, a redistribution layer, and a redistribution via, an under-bump metallurgy (UBM) layer below the redistribution portion and including a UBM pad on a lower surface of the redistribution portion and a UBM via on the UBM pad to penetrate through the insulating layer, a semiconductor chip on an upper surface of the redistribution portion and electrically connected to the redistribution layer, an adhesive layer between the UBM layer and the insulating layer and including a conductive material, and a connection bump below the UBM pad and connected to the UBM layer. The UBM pad has a first diameter, and the UBM via has a second diameter, less than the first diameter, and an upper surface of the UBM pad is located on the same level as, or a level lower than, a lower surface of the insulating layer.