Semiconductor Shielding Layer Grounded via TSV
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Solution Overview
Problem
Semiconductor devices face challenges in shielding against electromagnetic interference (EMI) and radio frequency interference (RFI) due to the generation of undesired inter-device interference, which can affect the operation of adjacent circuit elements, and existing methods require additional production steps and costs for dedicated ground connections.
Innovation Solution
The method involves creating a semiconductor device with through silicon vias (TSVs) that electrically connect a shielding layer to an interconnect structure, thereby isolating the semiconductor die from interference, eliminating the need for dedicated ground connections and additional manufacturing steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a shielding layer is disposed over the semiconductor device and connected to ground using a grounding wire or external connection, then the device is protected from EMI and RFI, but additional production steps and manufacturing costs are required
Solution Approach 1:
The patent merges the shielding layer integration with the existing TSV structure by forming conductive vias through the encapsulant that directly connect the shielding layer to the TSV. This combines two separate functions (shielding and interconnection) into a unified structure, eliminating the need for separate grounding wires or external ground connections while maintaining EMI/RFI protection effectiveness
Solution Approach 2:
The TSV structure is given multi-functionality by serving both as an electrical interconnection path and as a grounding path for the shielding layer. The same via structure that provides signal or power connection also provides the ground connection for EMI shielding, reducing the overall complexity and number of components needed
2Object-affected harmful factors
If dedicated ground connections are used to connect the shielding layer, then EMI and RFI protection is achieved, but manufacturing costs increase
Solution Approach 1:
The patent merges the shielding layer integration with the existing TSV structure by forming conductive vias through the encapsulant that directly connect the shielding layer to the TSV. This combines two separate functions (shielding and interconnection) into a unified structure, eliminating the need for separate grounding wires or external ground connections while maintaining EMI/RFI protection effectiveness
Solution Approach 2:
The TSV structure is given multi-functionality by serving both as an electrical interconnection path and as a grounding path for the shielding layer. The same via structure that provides signal or power connection also provides the ground connection for EMI shielding, reducing the overall complexity and number of components needed
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively shields semiconductor devices from EMI and RFI, enhancing their performance and reducing manufacturing costs by integrating the shielding directly into the device structure without requiring extra production steps for ground connections.
Implementation Method 1
electrically connecting the shielding layer to the TSV which in turn electrically connects to the interconnect structure
Implementation Method 2
a shielding layer is typically disposed over the device and connected to ground using a grounding wire or external connection. The semiconductor device substrate may utilize a ground plane
Data Source
AI summary
A semiconductor device is made by providing a substrate having an interconnect structure, providing a plurality of semiconductor die each having a through silicon via (TSV), mounting the semiconductor die to the substrate to electrically connect the TSV to the interconnect structure, depositing an encapsulant between the semiconductor die, and forming a shielding layer over the encapsulant and semiconductor die. The shielding layer is electrically connected to the TSV which in turn electrically connects to the interconnect structure to isolate the semiconductor die from interference. The shielding layer is electrically connected to a ground potential through the TSV and interconnect structure. The semiconductor die includes solder bumps which are electrically connected to contact pads on the substrate. The substrate also includes solder bumps electrically connected to a conductive channel in the interconnect structure which is electrically connected to the TSV. The substrate is singulated to separate the semiconductor die.