Auxetic Dicing Die-Attach Film for ESD-Safe Silicon Singulation

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Solution Overview

Problem

High density silicon die packaging faces challenges such as static electricity buildup and die cracking during stealth-dice-before-grind and cold-stretch processes, particularly in EMIB architectures, which require specialized materials to prevent damage and ensure efficient singulation.

Innovation Solution

A dicing die-attach film (DDAF) structure incorporating an auxetic material, such as auxetic porous foam or crumpled graphene nanosheets, combined with an electro-static discharge (ESD) preventative additive, is used to prevent static charge and reduce cracking, featuring an epoxy die attach film, acrylic adhesive, and polyolefin base film configuration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If insulating materials are used in adhesives for high density wafer processing, then die attachment strength is improved, but static electricity buildup occurs

Engineering Contradiction:
Improvedie attachment strengthVSAvoidstatic electricity buildup
Core Design Contradiction:
StrengthVSObject-generated harmful factors

Solution Approach 1:

The patent employs composite materials by combining insulating adhesive materials with conductive or dissipative additives (such as carbon-based materials or metal particles) to create a multi-functional adhesive layer that maintains both strong die attachment and electrostatic discharge prevention capabilities

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent modifies the electrical parameters of the adhesive material by adjusting the concentration and type of conductive fillers, changing the resistivity of the adhesive from highly insulating to electrostatic dissipative, thereby allowing charge dissipation while maintaining adhesive performance

Inventive Principle:
Principle #35Parameter changes

2Productivity

If stealth-dice-before-grind and cold-stretch processes are used for high density packaging, then packaging density is improved, but die cracking occurs

Engineering Contradiction:
Improvepackaging densityVSAvoiddie cracking
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent applies a specially formulated adhesive layer with optimized mechanical properties (flexibility, bond strength, and stress distribution characteristics) before the cold-stretch process, which acts as a cushioning layer that prevents die cracking during the subsequent mechanical deformation of the cold-stretch process

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

3Productivity

If die thickness is reduced for high density interconnections, then interconnection density is improved, but die cracking failures increase

Engineering Contradiction:
Improveinterconnection densityVSAvoiddie cracking failures
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent changes the mechanical parameters of the adhesive system, including bond strength, flexibility, and stress distribution properties, to accommodate thinner dies by optimizing the adhesive layer thickness and composition to provide adequate support without causing stress concentration that would lead to cracking

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces die cracking and peeling failures, enhances singulation efficiency, and prevents electrostatic discharge damage, improving the utility and efficiency of high-density silicon die architectures.

Implementation Method 1

an auxetic material disposed within the DDAF structure and configured to prevent dicing errors

Methodology Applied
Scientific EffectAuxetic effect: Auxetic Materials

Implementation Method 2

an electro-static discharge (ESD) preventative additive within the DDAF structure to prevent static charge within the DDAF structure

Methodology Applied
Scientific EffectElectrostatic discharge: Electrostatic Discharge

Data Source

PatentUS20240222182A1Method and apparatus for a silicon die preparation including auxetic and electrostatic dissipatative features
Publication Date: 2024.07.04 INTEL CORP
  • US20240222182A1 patent drawing
  • US20240222182A1 patent drawing
  • US20240222182A1 patent drawing

AI summary

The disclosure is directed to a silicon bridge die package, a dicing-die attach film structure and a method for silicon processing including a silicon bridge die package including at least two silicon die incorporating a plurality of integrated circuits, an embedded multi-die interconnect bridge coupled to the at least two silicon die, a dicing-die attach film (DDAF) structure coupled to a silicon wafer, an electro-static discharge (ESD) preventative within the DDAF structure to prevent static charge within the DDAF structure, and an auxetic material disposed within the DDAF structure configured to prevent dicing errors. A method for preparing a silicon die for singulation includes applying an auxetic material with an ESD preventative additive to an organic resin to form a DDAF, combining the DDAF with an acrylic adhesive and a polyolefin base film, and mounting the DDAF to the silicon die.