Auxetic Dicing Die-Attach Film for ESD-Safe Silicon Singulation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
High density silicon die packaging faces challenges such as static electricity buildup and die cracking during stealth-dice-before-grind and cold-stretch processes, particularly in EMIB architectures, which require specialized materials to prevent damage and ensure efficient singulation.
Innovation Solution
A dicing die-attach film (DDAF) structure incorporating an auxetic material, such as auxetic porous foam or crumpled graphene nanosheets, combined with an electro-static discharge (ESD) preventative additive, is used to prevent static charge and reduce cracking, featuring an epoxy die attach film, acrylic adhesive, and polyolefin base film configuration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If insulating materials are used in adhesives for high density wafer processing, then die attachment strength is improved, but static electricity buildup occurs
Solution Approach 1:
The patent employs composite materials by combining insulating adhesive materials with conductive or dissipative additives (such as carbon-based materials or metal particles) to create a multi-functional adhesive layer that maintains both strong die attachment and electrostatic discharge prevention capabilities
Solution Approach 2:
The patent modifies the electrical parameters of the adhesive material by adjusting the concentration and type of conductive fillers, changing the resistivity of the adhesive from highly insulating to electrostatic dissipative, thereby allowing charge dissipation while maintaining adhesive performance
2Productivity
If stealth-dice-before-grind and cold-stretch processes are used for high density packaging, then packaging density is improved, but die cracking occurs
Solution Approach 1:
The patent applies a specially formulated adhesive layer with optimized mechanical properties (flexibility, bond strength, and stress distribution characteristics) before the cold-stretch process, which acts as a cushioning layer that prevents die cracking during the subsequent mechanical deformation of the cold-stretch process
3Productivity
If die thickness is reduced for high density interconnections, then interconnection density is improved, but die cracking failures increase
Solution Approach 1:
The patent changes the mechanical parameters of the adhesive system, including bond strength, flexibility, and stress distribution properties, to accommodate thinner dies by optimizing the adhesive layer thickness and composition to provide adequate support without causing stress concentration that would lead to cracking
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces die cracking and peeling failures, enhances singulation efficiency, and prevents electrostatic discharge damage, improving the utility and efficiency of high-density silicon die architectures.
Implementation Method 1
an auxetic material disposed within the DDAF structure and configured to prevent dicing errors
Implementation Method 2
an electro-static discharge (ESD) preventative additive within the DDAF structure to prevent static charge within the DDAF structure
Data Source
AI summary
The disclosure is directed to a silicon bridge die package, a dicing-die attach film structure and a method for silicon processing including a silicon bridge die package including at least two silicon die incorporating a plurality of integrated circuits, an embedded multi-die interconnect bridge coupled to the at least two silicon die, a dicing-die attach film (DDAF) structure coupled to a silicon wafer, an electro-static discharge (ESD) preventative within the DDAF structure to prevent static charge within the DDAF structure, and an auxetic material disposed within the DDAF structure configured to prevent dicing errors. A method for preparing a silicon die for singulation includes applying an auxetic material with an ESD preventative additive to an organic resin to form a DDAF, combining the DDAF with an acrylic adhesive and a polyolefin base film, and mounting the DDAF to the silicon die.


