Auxiliary Layer Structure for Oxide TFT Carrier Supply
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Solution Overview
Problem
Display devices face challenges in supplying sufficient carriers to oxide semiconductor layers, leading to reduced on-current due to blocking by gate insulating layers, which affects the reliability and performance of transistors.
Innovation Solution
Incorporating an auxiliary layer rich in fluorine, chlorine, and carbon between the gate electrodes and semiconductor layers to act as a carrier source, increasing the on-current by supplying carriers to the oxide semiconductor layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a gate insulating layer is disposed on the semiconductor layer, then electrical insulation is improved, but carrier supply to the oxide semiconductor layer is blocked
Solution Approach 1:
The patent introduces an auxiliary layer as an intermediary component between the gate insulating layer and the oxide semiconductor layer. This auxiliary layer contains materials (such as tungsten, molybdenum, or their oxides) that facilitate carrier supply while maintaining the electrical insulation function of the gate insulating layer, thus resolving the contradiction between insulation and carrier supply.
Solution Approach 2:
The gate insulating layer structure is segmented into multiple functional layers: the gate insulating layer itself and the auxiliary layer. This segmentation allows each layer to perform its specific function - the gate insulating layer provides electrical insulation while the auxiliary layer provides carrier supply, eliminating the trade-off between these two requirements.
2Ease of manufacture
If conventional gate insulating layers are used, then manufacturing simplicity is maintained, but on-current is reduced due to carrier blocking
Solution Approach 1:
The patent employs composite material structures for the gate insulating layer system, combining traditional gate insulating materials (such as silicon oxide or silicon nitride) with auxiliary layer materials (tungsten, molybdenum, or their oxides). This composite approach enhances on-current through improved carrier supply while maintaining compatibility with existing manufacturing processes.
Solution Approach 2:
The patent modifies the compositional parameters of the gate insulating layer system by incorporating auxiliary materials with specific properties (high carrier supply capability). The auxiliary layer contains materials such as tungsten, molybdenum, or their oxides in controlled amounts, changing the physical and electrical parameters to achieve higher on-current without complicating manufacturing.
Data Source
AI summary
A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.