Avalanche Photodiode Wiring Layout for High-Voltage Reliability

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Solution Overview

Problem

Existing photoelectric conversion apparatuses lack sufficient reliability due to inadequate consideration of wiring when supplying high voltage to avalanche diodes in a layer structure, affecting the reliability and performance of the apparatus.

Innovation Solution

A photoelectric conversion apparatus is designed with a stacked configuration of two chips, one containing an avalanche diode and the other for signal processing, where the avalanche diode is applied with a first and second voltage, and the signal processing portion is supplied with a third voltage, ensuring a potential difference that promotes reliable operation and prevents reduction in circuit reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If high voltage is supplied to avalanche diodes in a layer structure, then photoelectric conversion capability is improved, but wiring reliability deteriorates due to inadequate voltage distribution consideration

Engineering Contradiction:
Improvephotoelectric conversion capabilityVSAvoidwiring reliability
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The patent divides the voltage supply system into multiple independent voltage lines (first voltage line for first potential, second voltage line for second potential, third voltage line for third potential) to different chip regions, allowing separate control and optimization of voltage distribution without interference, thus maintaining both high photoelectric conversion capability and wiring reliability

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different voltage potentials are applied to specific local regions: the first electrode region receives first potential, the second electrode region receives second potential, and the third electrode region receives third potential. This localized voltage optimization ensures that each region operates at its optimal electrical condition for both signal detection and wiring stability

Inventive Principle:
Principle #3Local quality

2Reliability

If multiple voltages are applied to different chip regions, then operational reliability is improved, but device complexity increases due to additional wiring layers

Engineering Contradiction:
Improveoperational reliabilityVSAvoidwiring layer complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines multiple voltage supply functions into a unified multilayer wiring structure where different voltage lines are integrated across the chip layers. The first, second, and third voltage lines are embedded within the multilayer wiring architecture, allowing simultaneous voltage distribution to multiple regions without requiring separate external wiring systems, thus managing complexity while maintaining operational reliability

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enhances the reliability and operational efficiency of the photoelectric conversion apparatus by ensuring proper voltage distribution and preventing signal propagation delays, thereby improving the overall performance and integration of the system.

Implementation Method 1

Certain photoelectric conversion apparatuses are known to be capable of detecting weak light at a single photon level by using avalanche (electron avalanche) multiplication

Methodology Applied
Scientific EffectAvalanche multiplication: Avalanche Breakdown

Data Source

PatentUS12021108B2Photoelectric conversion apparatus, photoelectric conversion system, and moving object
Publication Date: 2024.06.25 CANON KK
  • US12021108B2 patent drawing
  • US12021108B2 patent drawing
  • US12021108B2 patent drawing

AI summary

A photoelectric conversion apparatus includes a first and a second multilayer wiring layer. The first or the second multilayer wiring layer is provided with a first electrode supplied with a first voltage from an outside of the photoelectric conversion apparatus. The first electrode is not connected with a second semiconductor layer.