Solid-State Devices TRIZ Cases

Hard second protrusions support the resin cover during curing and singulation, reducing sink marks and stabilizing LED package height.

Monolithic integration of an inorganic light-emitting unit on an organic substrate improves flexible display resolution and light efficiency without mesa etching.

Faceted and smooth lens regions use total internal reflection to redirect stray LED light into uniform backlight patterns with less glare.

A non-rectilinear reflective light channel guides light to the active surface, improving directional detection or emission in compact optoelectronics.

Segmented doping and quantum well intermixing improve μ-LED directionality, cut non-radiative recombination, and extend lifespan.

Adhesive tape and trench-cut conductive vias stack semiconductor packages without an interposer, improving warpage control and simplifying manufacture.

Varying same-color filter thickness between edge and center pixels reduces crosstalk and evens sensitivity across the image sensor.

A monolithic InGaN pixel emits red, green, and blue without color converters or pick-and-place assembly, cutting losses and complexity.

A stacked LED bracket expands chip placement area while preserving insulation trenches to raise luminance and prevent short-circuiting.

A movable pressing tool pre-flattens warped semiconductor packages so chuck vacuum can hold them stably without shifting or vibration.

An offset stopper layer and word line protrusion prevent bit line contact shorts under misalignment, improving semiconductor memory reliability.

Integrated rectifier chips and a voltage reduction resistor let LED packaging run directly on AC or DC while improving heat dissipation and reliability.

Two APDs with different light-receiving areas share control through inverter-linked switches to cut circuit area and power while preserving sensitivity.

A conductive sublayer replaces the semiconductor at the capacitor interface, stabilizing storage capacitance and reducing signal crosstalk.

Layered dielectric materials raise effective permittivity in DRAM capacitors, increasing charge storage within a limited footprint.

Different transistor characteristics and lower subpixel density in the camera overlap area improve transmittance without sacrificing display quality.

A gate contact plug isolated from lower gate electrodes improves electrical reliability in vertically stacked memory while supporting higher storage density.

Different electrode areas limit solder diffusion while maintaining current distribution, improving optical efficiency and mounting stability.

A stacked two-sensor package uses an interposer and light-pervious encapsulation to enable two-way light detection in less space.

An expandable airbag layer raises chip bumps to compensate for thickness irregularities and prevent non-contact defects during LED transfer.

Integrating the drive transistor into each Micro LED chip avoids complex compensation circuits and supports dense, efficient transfer for high-resolution displays.

A common conductive structure and light-transmissive layer replace conductive pillars to raise pixel density and simplify LED display packaging.

A thin filler-based optical film placed close to light emitting elements improves light scattering, image quality, and layer simplicity.

A vertically stacked LED pixel increases luminous area in a compact footprint while reducing light leakage and mounting defects.

Ring-shaped quantum dot density tuning around UV LEDs reduces backlight color shift and improves uniform white emission in plane.

Sequential laser liftoff releases epitaxial layers one sacrificial layer at a time, boosting wafer reuse while reducing substrate damage and cost.

Moving pixel transistors to the opposite substrate surface preserves charge storage area and noise characteristics in stacked color photodetection pixels.

Patterned Fabry-Perot filters reflect unconverted micro-LED light back into color conversion layers, improving output color purity and conversion efficiency.

Rear-side bonding, fan-out lines, and pattern holes shrink tiled display seams while preserving substrate bending strength and immersion.

A shared N-well varactor and PMOS layout cuts anti-fuse cell area and on-resistance while improving read speed and reliability.

A multilayer line layout in the notch region cuts scanning-data coupling, reducing crosstalk and improving display stability.

Light source grooves in a direct backlight light guide plate spread LED light laterally, improving HDR uniformity without added lens thickness.

A stacked photoelectric conversion layout shifts transistor functions beside the imaging section to cut pixel area and improve SNR.

Multiple voltage domains let avalanche photodiode pulses be reshaped and down-converted for faster, more integrated signal processing.

An oxide semiconductor layer shields the contact opening from etching and oxidation, keeping interlayer conduction stable and resistance low.

Curved concave light extraction patterns redirect trapped emitted light in OLED displays to raise luminance and lower power consumption.

Varying SOI layer thickness by region lets logic, RF switching, and power/I/O devices share one substrate without sacrificing speed or threshold control.

A recessed light-shielding structure expands drain contact area through the buffer and insulating layers to cut resistance in AMOLED substrates.

Stepped protruding and recessed substrate edges enable double etching, easing curved display forming while lowering bending stress.

A stacked pixel layout places circuitry above the photosensitive region and links them by conductive trenches to raise fill factor without losing CMOS compatibility.

A flexible optoelectronic foil bonded to transparent base bodies enables unified vehicle glazing displays without sacrificing manufacturability.

A stacked fan-out and binding layout moves source-side connections vertically, cutting bezel space while maintaining one-to-one electrical routing.

A thin single-crystal oxide layer around the light emitting element core blocks impurity diffusion and reduces surface defects for more reliable displays.

An LED substrate placed in the non-display region narrows spliced screen gaps while preserving LCD resolution and controlling cost.

Charge trapping beneath buried-layer grooves raises substrate resistivity to cut RF loss while relieving epitaxial stress and deformation.

A stacked deep-N-well ESD clamp tunes snapback through well doping and layout to avoid gate oxide breakdown and false triggering.

Segmented laser-ablation and adhesive layers enable faster LED transfer with precise spacing, lower cost, and reduced display mura.

A transparent conductive terminal protective layer shields copper TFT terminals from etching during silver pixel electrode formation.

A tapered pixel separation wall blocks oblique and scattered light between color filters while preserving quantum efficiency in imaging sensors.