Oxide Display Panel Layout With Fewer Photomasks
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Solution Overview
Problem
The high number of masks required for manufacturing oxide backplates in high transmission fringe field switching (HFS) display panels increases production costs and reduces productivity compared to amorphous silicon (a-Si) backplates.
Innovation Solution
A display panel design where the gate, source, and drain electrodes are formed in a single metal layer, reducing the need for additional masks, and an oxide layer with a channel, conductor, and pixel electrode is formed using a single photomask, minimizing the number of masks required.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxide semiconductors are used to manufacture high-performance display panels, then mobility and display performance are improved, but the number of masks required increases from 4-6 to 6-9, causing significant cost increase and productivity loss
Solution Approach 1:
The invention merges the pixel electrode formation into the oxide semiconductor layer itself by using selective conduction treatment. The oxide semiconductor layer is patterned to simultaneously serve as both the active layer and pixel electrode, eliminating the need for separate pixel electrode masks and reducing total mask count from 6-9 to 4-6 masks.
Solution Approach 2:
The oxide semiconductor layer is designed to perform multiple functions: it serves as the active semiconductor layer, the pixel electrode, and the conductive connection element. By making the oxide semiconductor layer conductive in specific regions through selective treatment, it replaces what would traditionally require separate electrode layers and masks.
2Reliability
If oxide semiconductors are used to manufacture high-performance display panels, then mobility and display performance are improved, but the number of masks required increases from 4-6 to 6-9, causing significant cost increase
Solution Approach 1:
The invention merges the pixel electrode formation into the oxide semiconductor layer itself by using selective conduction treatment. The oxide semiconductor layer is patterned to simultaneously serve as both the active layer and pixel electrode, eliminating the need for separate pixel electrode masks and reducing total mask count from 6-9 to 4-6 masks.
3Manufacturing precision
If separate masks are used for gate electrode, source electrode, drain electrode, and pixel electrode, then each component can be precisely formed, but the manufacturing process becomes complex and time-consuming
Solution Approach 1:
The invention merges the pixel electrode formation into the oxide semiconductor layer itself by using selective conduction treatment. The oxide semiconductor layer is patterned to simultaneously serve as both the active layer and pixel electrode, eliminating the need for separate pixel electrode masks and reducing total mask count from 6-9 to 4-6 masks.
Solution Approach 2:
The invention changes the electrical parameter (conductivity) of the oxide semiconductor layer in different regions through selective treatment. By controlling the conduction state of the oxide semiconductor, it can function as either an active semiconductor layer or a conductive electrode, eliminating the need for separate electrode formation steps.
Data Source
AI summary
A display panel and a manufacturing method thereof are provided. The display panel includes a first metal layer, a first insulating layer, and an oxide layer. The first metal layer includes a gate electrode, a source electrode, and a drain electrode disposed in a same layer. The first insulating layer has openings exposing the source electrode and the drain electrode. The oxide layer is positioned on the first insulating layer and in the opening. The oxide layer includes a channel layer positioned above the gate electrode, a first conductor layer connected to the source electrode and the channel layer, a second conductor layer connected to the drain electrode and the channel layer, and a pixel electrode connected to the drain electrode.