μ-LED Doping Structure for Directional Light and Lower Recombination Loss
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Solution Overview
Problem
Current μ-LED technologies face challenges in achieving high directionality and reducing non-radiative recombination, leading to inefficiencies in light emission and short lifespan, especially in small form factor applications like augmented reality and automotive displays.
Innovation Solution
The use of slotted antenna structures and quantum well intermixing techniques to enhance radiative recombination and reduce non-radiative recombination, combined with specific doping and annealing processes to improve the efficiency and longevity of μ-LEDs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional μ-LED structures are used, then device simplicity is maintained, but light emission efficiency is low due to high non-radiative recombination
Solution Approach 1:
The active region is segmented into a central region and a surrounding annular region with different doping types. The central region has first doping type while the annular region has second doping type opposite to the first. This segmentation creates separate zones for radiative recombination (central) and non-radiative recombination suppression (annular), thereby reducing overall non-radiative losses without requiring complete structural redesign
Solution Approach 2:
Different doping configurations are applied to different spatial zones within the active region. The central region uses one doping type optimized for light emission, while the surrounding annular region uses the opposite doping type to suppress non-radiative recombination. This local differentiation allows each zone to perform its specific function optimally, improving overall light emission efficiency
2Duration of action of moving object
If μ-LED size is reduced for small form factor applications, then application suitability is improved, but lifespan is reduced due to efficiency droop under high current densities
Solution Approach 1:
The active region is divided into central and annular segments with different doping characteristics. This segmentation allows the small μ-LED structure to maintain efficient performance by directing current and recombination processes into optimized zones, reducing efficiency droop and extending lifespan despite the reduced overall device size
Solution Approach 2:
The doping parameters are changed spatially within the active region, with different doping types and concentrations applied to the central and annular regions. This parameter differentiation enables the small μ-LED to achieve better current distribution and reduced efficiency droop, thereby extending operational lifespan
3Illumination intensity
If conventional doping structures are used, then manufacturing simplicity is maintained, but light emission directionality is insufficient
Solution Approach 1:
The doping structure is segmented into distinct central and annular regions with opposite doping types. This segmentation creates built-in electric field patterns that enhance light emission directionality, while the concentric geometry remains compatible with standard semiconductor manufacturing processes
Solution Approach 2:
The doping structure introduces asymmetry between the central and annular regions, creating an optimized electric field distribution that enhances light emission directionality. The asymmetric doping configuration guides carrier recombination toward the central region, improving directional light output
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in improved light emission efficiency, extended lifespan, and enhanced performance under high current densities, addressing the limitations of existing μ-LED technologies in small form factor applications.
Implementation Method 1
enhance radiative recombination and reduce non-radiative recombination
Implementation Method 2
enhance radiative recombination and reduce non-radiative recombination
Implementation Method 3
quantum well intermixing techniques to enhance radiative recombination
Implementation Method 4
combined with specific doping and annealing processes to improve the efficiency and longevity
Data Source
AI summary
The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.