Semiconductor Device Support Pillars Structural Stability
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Solution Overview
Problem
Three-dimensional semiconductor memory devices face challenges in achieving structural stability as the number of stacked memory cells increases, making it difficult to maintain device integrity.
Innovation Solution
The semiconductor device incorporates a stacked structure with alternating interlayer insulating layers and conductive patterns, along with support pillars that extend through both stacked structures, providing reinforcement and stability by overlapping multiple pillars to distribute stress effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of stacked memory cells is increased to improve integration density, then the integration density is improved, but the structural stability deteriorates
Solution Approach 1:
The patent introduces support pillars extending in the vertical dimension through multiple stacked structures to provide structural reinforcement. This dimensional approach allows the device to achieve higher integration density through stacking while maintaining stability through vertically extending support elements that span across multiple memory cell layers.
Solution Approach 2:
The patent employs composite structural design by combining multiple materials with different properties: conductive patterns for electrical function, interlayer insulating layers for electrical isolation, and support pillars for mechanical strength. This composite approach enables simultaneous achievement of high integration density and structural stability by leveraging the complementary properties of different materials.
2Quantity of substance
If the number of stacked memory cells is increased to improve integration density, then the integration density is improved, but the device integrity deteriorates
Solution Approach 1:
The support pillars extend vertically through multiple stacked structures, providing reinforcement across the entire height of the device. This vertical dimensional approach ensures that device integrity is maintained throughout the stacked structure, allowing higher integration density without compromising reliability.
Solution Approach 2:
The support pillars are positioned beforehand to prevent potential structural failures before they occur. By pre-establishing these reinforcement elements throughout the stacked structure, the device is protected against mechanical stress and potential failure points, ensuring maintained device integrity at high integration densities.
Data Source
AI summary
The present disclosure relates to a semiconductor device having improved structural stability and a method of manufacturing such a semiconductor device. The semiconductor device includes a first stacked structure and a second stacked structure. The semiconductor device further includes a first support including a first upper pillar passing through the second stacked structure and including at least two first lower pillars extending from the first upper pillar and passing through the first stacked structure.